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PASSIVATION LAYER FORMATION BY PLASMA CLEAN PROCESS TO REDUCE NATIVE OXIDE GROWTH

  • US 20080160210A1
  • Filed: 12/21/2007
  • Published: 07/03/2008
  • Est. Priority Date: 02/26/2004
  • Status: Active Grant
First Claim
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1. A method for removing native oxides from a substrate surface, comprising:

  • positioning a substrate comprising an oxide layer within a processing chamber;

    adjusting a first temperature of the substrate to about 80°

    C. or less;

    generating a cleaning plasma from a gas mixture within the processing chamber, wherein the gas mixture comprises ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater;

    condensing the cleaning plasma onto the substrate and forming a thin film during a plasma clean process, wherein the thin film comprises ammonium hexafluorosilicate formed in part from the oxide layer; and

    heating the substrate to a second temperature of about 100°

    C. or greater within the processing chamber, while removing the thin film from the substrate and forming a passivation surface thereon.

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