PASSIVATION LAYER FORMATION BY PLASMA CLEAN PROCESS TO REDUCE NATIVE OXIDE GROWTH
First Claim
1. A method for removing native oxides from a substrate surface, comprising:
- positioning a substrate comprising an oxide layer within a processing chamber;
adjusting a first temperature of the substrate to about 80°
C. or less;
generating a cleaning plasma from a gas mixture within the processing chamber, wherein the gas mixture comprises ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater;
condensing the cleaning plasma onto the substrate and forming a thin film during a plasma clean process, wherein the thin film comprises ammonium hexafluorosilicate formed in part from the oxide layer; and
heating the substrate to a second temperature of about 100°
C. or greater within the processing chamber, while removing the thin film from the substrate and forming a passivation surface thereon.
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Accused Products
Abstract
Embodiments described herein provide methods for removing native oxide surfaces on substrates while simultaneously passivating the underlying substrate surface. In one embodiment, a method is provided which includes positioning a substrate containing an oxide layer within a processing chamber, adjusting a first temperature of the substrate to about 80° C. or less, generating a cleaning plasma from a gas mixture within the processing chamber, such that the gas mixture contains ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater, and condensing the cleaning plasma onto the substrate. A thin film, containing ammonium hexafluorosilicate, is formed in part, from the native oxide during a plasma clean process. The method further includes heating the substrate to a second temperature of about 100° C. or greater within the processing chamber while removing the thin film from the substrate and forming a passivation surface thereon.
359 Citations
20 Claims
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1. A method for removing native oxides from a substrate surface, comprising:
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positioning a substrate comprising an oxide layer within a processing chamber; adjusting a first temperature of the substrate to about 80°
C. or less;generating a cleaning plasma from a gas mixture within the processing chamber, wherein the gas mixture comprises ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater; condensing the cleaning plasma onto the substrate and forming a thin film during a plasma clean process, wherein the thin film comprises ammonium hexafluorosilicate formed in part from the oxide layer; and heating the substrate to a second temperature of about 100°
C. or greater within the processing chamber, while removing the thin film from the substrate and forming a passivation surface thereon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for removing native oxides from a substrate surface, comprising:
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positioning a substrate comprising an oxide layer within a processing chamber; adjusting a first temperature of the substrate to less than about 100°
C.;generating a cleaning plasma from a gas mixture within the processing chamber, wherein the gas mixture comprises ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 20 or greater and the cleaning plasma is generated by a RF power within a range from about 5 watts to about 50 watts; exposing the substrate to the cleaning plasma to form a thin film during a plasma clean process, wherein the thin film comprises ammonium hexafluorosilicate formed in part from the oxide layer; and heating the substrate to a second temperature of about 100°
C. or greater within the processing chamber, while removing the thin film from the substrate and forming a passivation surface thereon. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A method for removing native oxides from a substrate surface, comprising:
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positioning a substrate comprising an oxide layer within a processing chamber; adjusting a first temperature of the substrate to less than about 100°
C.;generating a cleaning plasma from a gas mixture within the processing chamber, wherein the gas mixture comprises ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater and the cleaning plasma is generated by a RF power within a range from about 5 watts to about 50 watts; exposing the substrate to the cleaning plasma to form a thin film during a plasma clean process, wherein the thin film comprises ammonium hexafluorosilicate formed in part from the oxide layer; heating the substrate to a second temperature of about 100°
C. or greater within the processing chamber, while removing the thin film from the substrate and forming a passivation surface thereon; andgrowing an epitaxial layer on the passivation surface of the substrate.
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Specification