APPARATUS AND METHOD FOR CONFORMAL MASK MANUFACTURING
First Claim
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1. A method for processing comprising:
- providing a workpiece comprising a layer that is configured to be patterned by a particle beam and a first transfer layer thereunder, the particle beam patternable layer being thinner than the first transfer layer; and
exposing regions of the particle beam patternable layer using a collimated beam of spatially and temporally resolved charged particles thereby changing said regions;
wherein the first transfer layer is configured to be selectively processed relative to the particle beam patternable layer using a first removal process that removes regions of the first transfer layer having a shape substantially determined by the shape of the exposed regions of the particle beam patternable layer.
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Abstract
A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.
240 Citations
212 Claims
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1. A method for processing comprising:
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providing a workpiece comprising a layer that is configured to be patterned by a particle beam and a first transfer layer thereunder, the particle beam patternable layer being thinner than the first transfer layer; and exposing regions of the particle beam patternable layer using a collimated beam of spatially and temporally resolved charged particles thereby changing said regions; wherein the first transfer layer is configured to be selectively processed relative to the particle beam patternable layer using a first removal process that removes regions of the first transfer layer having a shape substantially determined by the shape of the exposed regions of the particle beam patternable layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 210, 211, 212)
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40. A method for forming structures comprising:
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providing a workpiece comprising a layer that is configured to be patterned by a particle beam and a first transfer layer thereunder; exposing regions of the particle beam patternable layer to a collimated beam of spatially and temporally resolved charged particles thereby changing said regions; removing the exposed regions of the particle beam patternable layer to reveal regions of the first transfer layer having a shape substantially determined by the shape of the exposed regions of the particle beam patternable layer; and performing a first removal process on the first transfer layer thereby removing regions of the first transfer layer having a shape substantially determined by the shape of the exposed regions of the particle beam patternable layer. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78)
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79. A method for processing comprising:
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providing a workpiece comprising a layer that is configured to be patterned by a particle beam and a first transfer layer under the patternable layer; and exposing regions of the particle beam patternable layer to a beam of charged particles thereby changing said regions; wherein the first transfer layer is configured to be selectively processed relative to the particle beam patternable layer using a first removal process that removes regions of the first transfer layer having a shape substantially determined by the shape of the exposed regions of the particle beam patternable layer, the selectivity of the first removal process to the first transfer layer relative to the patternable layer being at least 2x. - View Dependent Claims (80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 115, 116)
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117. A method for forming structures comprising:
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providing a workpiece comprising a layer that is configured to be patterned by a particle beam and a first transfer layer under the particle beam patternable layer, the first transfer layer being configured to be selectively processed relative to the particle beam patternable layer using a first removal process that removes regions of the first transfer layer having a shape substantially determined by the shape of the exposed regions of the particle beam patternable layer, the selectivity of the first removal process to the first transfer layer relative to the particle beam patternable layer being at least 2×
; andexposing regions of the particle beam patternable layer to a beam of charged particles thereby changing said regions; removing the exposed regions of the particle beam patternable layer to reveal regions of the first transfer layer having a shape substantially determined by the shape of the exposed regions of the particle beam patternable layer; and performing the first removal process on the first transfer layer. - View Dependent Claims (118, 119, 120, 121, 122, 123, 124, 125, 126, 127, 128, 129, 130, 131, 132, 133, 134, 135, 136, 137, 138, 139, 140, 141, 142, 143, 144, 146, 147, 148, 149, 150, 151, 152, 153, 154, 155, 156, 157, 158, 159, 160, 161, 162, 163, 164)
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145. The method of claim 145, wherein the second removal process comprises a reactive ion etch.
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165. An in-process workpiece comprising:
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a substrate; a first transfer layer; a second transfer layer between the first transfer layer and the substrate, said second transfer layer comprising organic material; and a patterned layer of oxide, the first transfer layer disposed between the oxide layer and the second transfer layer, wherein the first transfer material is configured to be selectively removed relative to the oxide layer and relative to the second transfer layer, and wherein the second transfer layer is configured to be selectively removed relative to the first transfer layer. - View Dependent Claims (166, 167, 168, 169, 170)
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171. A method for processing comprising:
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providing a workpiece comprising a first transfer layer; and depositing material on regions of the first transfer layer using a particle beam thereby forming on the first transfer layer a layer having a pattern, wherein the first transfer layer is configured to be selectively processed relative to the patterned layer using a first removal process that removes regions of the first transfer layer having a shape substantially determined by the shape of the deposited regions of the patterned layer. - View Dependent Claims (172, 173, 174, 175, 176, 177, 178, 179, 180, 181, 182, 183, 184, 185, 186, 187, 188, 189, 190, 191, 192, 193, 194, 195, 196, 197, 198, 199, 200, 201, 202, 203, 204, 205, 206, 207, 208, 209)
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Specification