PRESSURE TRANSDUCER DIAPHRAGM AND METHOD OF MAKING SAME

• US 20080160659A1
• Filed: 12/29/2006
• Published: 07/03/2008
• Est. Priority Date: 12/29/2006
• Status: Abandoned Application

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Craddock, Russell William, Kinnell, Peter Ken
• Application Number:
  US11/617,808
• Publication Number:
  US 20080160659A1
• Time in Patent Office: Days
• US Class Current: 438/53
• CPC Class Codes: B81B 3/007 For controlling stiffness, e.g. ribs
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively

Abstract

A method of making a pressure transducer diaphragm. One or more trenches are etched in a first surface of a first substrate. The trench is rendered etch resistant. A cavity is then formed in a second opposite surface of the first substrate defining a diaphragm supported by a frame with one or more hollow bosses stiffening the membrane.

Claims

1. A method of making a pressure transducer diaphragm, the method comprising:

etching one or more trenches in a first surface of a first substrate;

rendering the trench etch resistant; and

etching a cavity in a second opposite surface of the first substrate defining a diaphragm supported by a frame with one or more hollow bosses stiffening the membrane.

2. The method of claim 1 in which etching the one or more trenches includes dry etching or wet etching.

3. The method of claim 1 in which the one or more trenches have angled side walls.

4. The method of claim 3 in which the one or more trenches have a flat bottom.

5. The method of claim 1 in which rendering the trench etch resistant includes doping the trench, diffusing the trench, or adding an etch resistant material to the trench.

6. The method of claim 1 further including the step of adding material to the trench.

7. The method of claim 6 in which polysilicon or epitaxial silicon layers are grown in the trench.

8. The method of claim 1 in which a second substrate is bonded to the first surface of the first substrate.

9. The method of claim 8 in which the second substrate is fusion bonded to the first surface of the first substrate.

10. The method of claim 1 in which etching the cavity includes dry or wet etching.

11. A method of making a pressure transducer diaphragm, the method comprising:

etching one or more trenches in a first surface of a first substrate;

rendering the trench and the first surface etch resistant; and

etching a cavity in a second opposite surface of the first substrate defining a diaphragm supported by a frame with one or more hollow bosses stiffening the membrane.

12. A method of making a pressure transducer diaphragm, the method comprising:

etching one or more trenches in a first surface of a first substrate;

rendering the trench etch resistant;

bonding a second substrate to the first surface; and

etching a cavity in a second opposite surface of the first substrate defining a diaphragm supported by a frame with one or more hollow bosses stiffening the membrane.

13. A method of making a diaphragm, the method comprising:

forming one or more trenches in a first surface of a first substrate;

rendering the trench etch resistant; and

forming a cavity in a second opposite surface of the first substrate defining a diaphragm supported by a frame with one or more hollow bosses stiffening the membrane.