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METHODS OF FABRICATING SHIELD PLATES FOR REDUCED FIELD COUPLING IN NONVOLATILE MEMORY

  • US 20080160680A1
  • Filed: 12/28/2006
  • Published: 07/03/2008
  • Est. Priority Date: 12/28/2006
  • Status: Abandoned Application
First Claim
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1. A method of fabricating nonvolatile memory, comprising:

  • forming a plurality of adjacent charge storage regions in a first direction along a substrate, said charge storage regions having a lower surface level;

    forming a plurality of adjacent control gates above said charge storage regions, said control gates having an upper surface level;

    forming insulating members along sides of said charge storage regions facing adjacent charge storage regions in said first direction and along sides of said control gates facing adjacent control gates in said first direction, said insulating members extending from at least said lower surface level of said floating gates to at least said upper surface level of said control gates; and

    forming conductive isolating members along said insulating members, said isolating members insulated from said charge storage regions and said control gates by said insulating members.

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