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Method of fabricating multi-gate transistor and multi-gate transistor fabricated thereby

  • US 20080160684A1
  • Filed: 03/05/2008
  • Published: 07/03/2008
  • Est. Priority Date: 06/29/2004
  • Status: Active Grant
First Claim
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1. A method of fabricating a multi-gate transistor comprising:

  • forming an active pattern on a substrate, the active pattern having two or more surfaces on which channel regions are to be formed;

    forming a gate insulating layer on the channel regions; and

    forming a patterned gate electrode on the gate insulating layer while maintaining a shape conformal to the active pattern.

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