Method of fabricating multi-gate transistor and multi-gate transistor fabricated thereby
First Claim
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1. A method of fabricating a multi-gate transistor comprising:
- forming an active pattern on a substrate, the active pattern having two or more surfaces on which channel regions are to be formed;
forming a gate insulating layer on the channel regions; and
forming a patterned gate electrode on the gate insulating layer while maintaining a shape conformal to the active pattern.
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Abstract
Provided are a method of fabricating an improved multi-gate transistor and a multi-gate transistor fabricated using the method, in which an active pattern is formed on a substrate, the active pattern having two or more surfaces on which channel regions are to be formed, a gate insulating layer is formed on the channel regions, and a patterned gate electrode is formed on the gate insulating layer while maintaining a shape conformal to the active pattern.
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Citations
17 Claims
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1. A method of fabricating a multi-gate transistor comprising:
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forming an active pattern on a substrate, the active pattern having two or more surfaces on which channel regions are to be formed; forming a gate insulating layer on the channel regions; and forming a patterned gate electrode on the gate insulating layer while maintaining a shape conformal to the active pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification