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Method for Fabricating Semiconductor Device Having Bulb-Type Recessed Channel

  • US 20080160699A1
  • Filed: 06/07/2007
  • Published: 07/03/2008
  • Est. Priority Date: 12/28/2006
  • Status: Abandoned Application
First Claim
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1. A method for fabricating a semiconductor device having a bulb-type recessed channel comprising:

  • forming a mask layer on the semiconductor substrate to expose a region where a trench for a bulb-type recessed channel can be formed;

    forming the trench in the semiconductor substrate;

    implanting dopant ions in three-dimensional radial directions with a predetermined tilt angle in the exposed region of the semiconductor substrate;

    removing the mask layer;

    forming a gate stack in the region including the trench; and

    forming a source/drain in the semiconductor substrate.

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