Method for Fabricating Semiconductor Device Having Bulb-Type Recessed Channel
First Claim
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1. A method for fabricating a semiconductor device having a bulb-type recessed channel comprising:
- forming a mask layer on the semiconductor substrate to expose a region where a trench for a bulb-type recessed channel can be formed;
forming the trench in the semiconductor substrate;
implanting dopant ions in three-dimensional radial directions with a predetermined tilt angle in the exposed region of the semiconductor substrate;
removing the mask layer;
forming a gate stack in the region including the trench; and
forming a source/drain in the semiconductor substrate.
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Abstract
A method for fabricating a semiconductor device having a bulb-type recessed channel including forming a mask layer on the semiconductor substrate to expose a region where a trench for a bulb-type recessed channel can be formed, forming the trench in the semiconductor substrate, implanting dopant ions in three-dimensional radial directions with a predetermined tilt angle in the exposed region of the semiconductor substrate, removing the mask layer, forming a gate stack in the region including the trench, and forming a source/drain in the semiconductor substrate.
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11 Claims
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1. A method for fabricating a semiconductor device having a bulb-type recessed channel comprising:
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forming a mask layer on the semiconductor substrate to expose a region where a trench for a bulb-type recessed channel can be formed; forming the trench in the semiconductor substrate; implanting dopant ions in three-dimensional radial directions with a predetermined tilt angle in the exposed region of the semiconductor substrate; removing the mask layer; forming a gate stack in the region including the trench; and forming a source/drain in the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification