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METHOD OF FABRICATING SILICON/DIELECTRIC MULTI-LAYER SEMICONDUCTOR STRUCTURES USING LAYER TRANSFER TECHNOLOGY AND ALSO A THREE-DIMENSIONAL MULTI-LAYER SEMICONDUCTOR DEVICE AND STACKED LAYER TYPE IMAGE SENSOR USING THE SAME METHOD, AND A METHOD OF MANUFACTURING A THREE-DIMENSIONAL MULTI-LAYER SEMICONDUCTOR DEVICE AND THE STACK TYPE IMAGE SENSOR

  • US 20080160723A1
  • Filed: 03/11/2008
  • Published: 07/03/2008
  • Est. Priority Date: 09/13/2005
  • Status: Active Grant
First Claim
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1. A method of fabricating a silicon/dielectric multi-layer thin film for fabricating a semiconductor device of a multi-layer structure, the method comprising:

  • a step of preparing a handle wafer;

    a donor wafer preparation step for layer transfer, of forming semiconductor layers in a donor wafer;

    a layer transfer step of turning over the donor wafer so that the donor wafer is bonded to a top surface of the handle wafer, whereby the semiconductor layer remains but the remaining donor wafer is removed through layer transfer;

    a step of forming a dielectric layer on the handle wafer on which the layer transfer has been performed; and

    a step of repeating the donor wafer preparation step, the layer transfer step, and the dielectric layer formation step, thus forming a multi-layer silicon/dielectric layer.

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