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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20080160741A1
  • Filed: 11/01/2007
  • Published: 07/03/2008
  • Est. Priority Date: 12/29/2006
  • Status: Abandoned Application
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • forming a plurality of trench gate electrodes in a semiconductor substrate, the trench gate electrodes protruding from the semiconductor substrate at a predetermined height;

    forming a polycrystal silicon film on the entire surface of the substrate wherein the trench gate electrodes are formed;

    performing an anisotropic etching process on the polycrystal silicon film so as to expose an upper surface of the trench gate electrodes, in order to form spacers on each sides of the trench gate electrodes;

    forming an insulating film on the surface of the substrate wherein the trench gate electrodes and spacers are formed;

    forming a plurality of photoresist patterns on the insulating film;

    etching the insulating film using the photoresist patterns so as to form a plurality of insulating film patterns; and

    forming metal film patterns in the area between the insulating film patterns so as to form a series of contacts capable of electrically connecting to the trench gate electrodes.

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