NONVOLATILE MEMORY WITH ERROR CORRECTION FOR PAGE COPY OPERATION AND METHOD THEREOF
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Abstract
The disclosure is a NAND flash memory with the function of error checking and correction during a page copy operation. The NAND flash memory is able to prohibit transcription of erroneous bits to a duplicate page from a source page. Embodiments of the inventive flash memory include a correction circuit for correcting bit errors of source data stored in a page buffer, a circuit configured to provide the source data to the correction circuit and to provide correction data to the page buffer, and a copy circuit configured to copy the source data to the page buffer, and to store the correction data in the other page from the page buffer.
144 Citations
37 Claims
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1-9. -9. (canceled)
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10. A method of transferring source data of a first position to a second position in a memory system, the memory system comprising a nonvolatile memory including a memory cell array and a buffer, the method comprising:
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receiving a first command and address; storing the source data of the first position of the memory cell array into the buffer in response to the first command and address; detecting a bit error of the source data stored in the buffer; correcting the bit error when it is detected; receiving a second command and address; and copying the corrected source data to the second position of the memory cell array in response to the second command and address, after the correcting. - View Dependent Claims (11, 12, 13, 14)
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15. A method of transferring source data of a first position to a second position in a memory system, the memory system comprising a nonvolatile memory including a buffer and a memory controller to control the nonvolatile memory, the method comprising:
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providing a read command and a first address to the nonvolatile memory from the memory controller in order to store the source data of the first position of the nonvolatile memory into the buffer; detecting a bit error of the source data stored in the buffer; correcting the bit error when it is detected; and providing a write command and a second address to the nonvolatile memory from the memory controller in order to copy the corrected source data to the second position of the nonvolatile memory, after the correcting. - View Dependent Claims (16, 17, 18, 19)
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20. A memory system comprising:
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a nonvolatile memory cell array storing source data in a first position; a buffer temporarily storing the source data of the first position; and an error correction circuit for detecting a bit error of the source data stored in the buffer and for correcting the bit error when it is detected; wherein the corrected source data is copied to a second position of the nonvolatile memory cell array after the error correction. - View Dependent Claims (21, 22, 23, 24, 25)
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26. A method of transferring source data of a first position to a second position in a memory system, the memory system comprising a nonvolatile memory including a memory cell array and a buffer, the method comprising:
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storing the source data of the first position of the memory cell array into the buffer; detecting a bit error of the source data stored in the buffer; correcting the bit error when it is detected; and copying the corrected source data to the second position of the memory cell array after the correcting. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification