CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES
First Claim
1. A method of reducing threading dislocation densities in a III-Nitride material, comprising:
- growing a nucleation layer on a substrate;
growing a template layer on the nucleation layer, the template layer providing a crystal orientation;
depositing a mask on the template layer, the mask having a top surface;
etching the mask, the template layer, and the nucleation layer, wherein the crystal orientation is exposed on the template layer in a plurality of windows created by the etching;
growing a group-III nitride layer within the plurality of windows, wherein when the growth of the group-III nitride layer reaches the top surface, the group-III nitride layer grows along the top surface such that growth within a first window coalesces with growth of a second window at an intersection point to create a substantially planar upper surface of the group-III nitride layer; and
smoothing the substantially planar upper surface of the group-III nitride layer, such that the group-III nitride layer has a reduced number of threading dislocation densities.
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Abstract
A method of reducing threading dislocation densities in non-polar such as a- {11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.
94 Citations
15 Claims
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1. A method of reducing threading dislocation densities in a III-Nitride material, comprising:
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growing a nucleation layer on a substrate; growing a template layer on the nucleation layer, the template layer providing a crystal orientation; depositing a mask on the template layer, the mask having a top surface; etching the mask, the template layer, and the nucleation layer, wherein the crystal orientation is exposed on the template layer in a plurality of windows created by the etching; growing a group-III nitride layer within the plurality of windows, wherein when the growth of the group-III nitride layer reaches the top surface, the group-III nitride layer grows along the top surface such that growth within a first window coalesces with growth of a second window at an intersection point to create a substantially planar upper surface of the group-III nitride layer; and smoothing the substantially planar upper surface of the group-III nitride layer, such that the group-III nitride layer has a reduced number of threading dislocation densities. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification