SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a semiconductor layer of a first conductivity type;
a semiconductor layer of a second conductivity type formed on the semiconductor layer of the first conductivity type, wherein the semiconductor layer of the second conductivity type is characterized by a first thickness;
a body layer extending a first predetermined distance into the semiconductor layer of the second conductivity type;
a pair of trenches extending a second predetermined distance into the semiconductor layer of the second conductivity type, wherein each of the pair of trenches is characterized by a width and consists essentially of a dielectric material disposed therein, wherein a concentration of doping impurities present in the semiconductor layer of the second conductivity type and a distance between the pair of trenches define an electrical characteristic of the semiconductor device that is independent of the width of each of the pair of trenches;
a control gate coupled to the semiconductor layer of the second conductivity type; and
a source region coupled to the semiconductor layer of the second conductivity type.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device includes a semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type formed thereon. The semiconductor device also includes a body layer extending a first predetermined distance into the semiconductor layer of the second conductivity type and a pair of trenches extending a second predetermined distance into the semiconductor layer of the second conductivity type. Each of the pair of trenches consists essentially of a dielectric material disposed therein and a concentration of doping impurities present in the semiconductor layer of the second conductivity type and a distance between the pair of trenches define an electrical characteristic of the semiconductor device. The semiconductor device further includes a control gate coupled to the semiconductor layer of the second conductivity type and a source region coupled to the semiconductor layer of the second conductivity type.
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Citations
37 Claims
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1. A semiconductor device comprising:
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a semiconductor layer of a first conductivity type; a semiconductor layer of a second conductivity type formed on the semiconductor layer of the first conductivity type, wherein the semiconductor layer of the second conductivity type is characterized by a first thickness; a body layer extending a first predetermined distance into the semiconductor layer of the second conductivity type; a pair of trenches extending a second predetermined distance into the semiconductor layer of the second conductivity type, wherein each of the pair of trenches is characterized by a width and consists essentially of a dielectric material disposed therein, wherein a concentration of doping impurities present in the semiconductor layer of the second conductivity type and a distance between the pair of trenches define an electrical characteristic of the semiconductor device that is independent of the width of each of the pair of trenches; a control gate coupled to the semiconductor layer of the second conductivity type; and a source region coupled to the semiconductor layer of the second conductivity type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a semiconductor layer of a first conductivity type; a semiconductor layer of a second conductivity type formed on the semiconductor layer of the first conductivity type, wherein the semiconductor layer of the second conductivity type is characterized by a first thickness; a body layer extending a first predetermined distance into the semiconductor layer of the second conductivity type; a plurality of trenches extending a second predetermined distance into the semiconductor layer of the second conductivity type, wherein each of the plurality of trenches comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced charge; a plurality of control gates coupled to the semiconductor layer of the second conductivity type; and a plurality of source regions coupled to the semiconductor layer of the second conductivity type. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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35. A semiconductor device comprising:
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a semiconductor layer of a first conductivity type; a semiconductor layer including a first set of pillars having the first conductivity type and a second set of pillars having a second conductivity type, the first set of pillars and the second set of pillars being formed on the semiconductor layer of the first conductivity type, wherein the first set of pillars and the second set of pillars are characterized by a first thickness; a plurality of trenches extending a predetermined distance into either the first set of pillars or the second set of pillars, wherein each of the plurality of trenches comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced charge; a plurality of control gates coupled to the semiconductor layer including the first set of pillars and the second set of pillars; and a plurality of source regions coupled to the semiconductor layer including the first set of pillars and the second set of pillars. - View Dependent Claims (36, 37)
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Specification