ELECTRONIC DEVICE AND PROCESS FOR MANUFACTURING THE SAME

• US 20080164581A1
• Filed: 01/04/2008
• Published: 07/10/2008
• Est. Priority Date: 01/04/2007
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Interuniversitair Micro-Electronica Centrum VZW (IMEC International), Samsung Electronics Co. Ltd.
• Inventors: Cho, Hag-Ju, De Gendt, Stefan, Schram, Tom
• Application Number:
  US11/969,679
• Publication Number:
  US 20080164581A1
• Time in Patent Office: Days
• US Class Current: 257/632
• CPC Class Codes: H01L 21/28088 the final conductor layer next to the insulator being a composite, e.g. TiN
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An electronic device and a process for manufacturing the same are disclosed. In one aspect, the device comprises an electrode comprising a metal compound selected from the group of tantalum carbide, tantalum carbonitride, hafnium carbide and hafnium carbonitride. The device further comprises a high-k dielectric layer of a hafnium oxide comprising nitrogen and silicon, the high-k dielectric layer having a k value of at least 4.0. The device further comprises a nitrogen and/or silicon and/or carbon barrier layer placed between the electrode and the high-k dielectric layer. The nitrogen and/or silicon and/or carbon barrier layer comprises one or more metal oxides, the metal of the metal oxides being selected from the group of lanthanides, aluminium or hafnium.

Claims

1. A device comprising:

an electrode comprising a metal compound selected from the group of tantalum carbide, tantalum carbonitride, hafnium carbide, and hafnium carbonitride,

a high-k dielectric layer of a hafnium oxide comprising nitrogen and silicon, the high-k dielectric layer having a k value of at least about 4.0; and

a barrier layer placed between the electrode and the high-k dielectric layer, the barrier layer effectively preventing nitrogen and/or silicon and/or carbon to be transported from the electrode to the high-k layer or from the high-k layer to the electrode, wherein the barrier layer comprises at least one metal oxide comprising one of lanthanide, aluminium or hafnium.

2. The device according to claim 1, further comprising a substrate onto which the high-k dielectric layer is placed.

3. The device according to claim 2, wherein the substrate is a semiconductive substrate or conductive substrate.

4. The device according to claim 1, wherein the thickness of the barrier layer is above about 1.5 nm and below 100 nm.

5. The device according to claim 1, wherein the thickness of the barrier layer is in a range from about 0.2 nm to 1 nm.

6. The device according to claim 1, wherein the metal of the metal oxides comprised within the barrier layer is lanthanum or hafnium.

7. The device according to claim 1, wherein the metal oxide comprised within the barrier layer is amorphous.

8. The device according to claim 1, wherein the electrode comprises tantalum carbide, hafnium carbide or mixtures thereof.

9. The device according to claim 1, wherein the device is part of a capacitor.

10. The device according to claim 1, wherein the device is part of a gate of a transistor.

11. The device according to claim 10, wherein the transistor is a MOSFET.

12-17. -17. (canceled)

18. A method of manufacturing an electronic device, the method comprising:

forming a high-k dielectric layer of a hafnium oxide comprising nitrogen and silicon, the high-k dielectric layer having a k value of at least about 4.0 on a substrate;

forming a barrier layer on or over the high-k dielectric layer; and

forming an electrode on or over the barrier layer, the electrode comprising a metal compound selected from the group of tantalum carbide, tantalum carbonitride, hafnium carbide, and hafnium carbonitride

wherein the barrier layer effectively prevents nitrogen and/or silicon and/or carbon to be transported from the electrode to the high-k layer or from the high-k layer to the electrode, wherein the barrier layer comprises at least one metal oxide comprising one of lanthanide, aluminum or hafnium.

19. The method according to claim 18, further comprising forming a polysilicon layer onto the electrode.

20. An electronic device as manufactured according to claim 18.