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Semiconductor apparatus using ion beam

  • US 20080164819A1
  • Filed: 01/08/2008
  • Published: 07/10/2008
  • Est. Priority Date: 01/08/2007
  • Status: Abandoned Application
First Claim
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1. A semiconductor apparatus comprising:

  • a plasma chamber including a wall portion to which a reference voltage is applied and an inner space in which plasma is generated; and

    a plurality of grids adjacent to the plasma chamber inducing ion beams from the plasma, whereineach of the grids includes a plurality of induction holes through which the ion beams pass,a voltage having the same potential level as that of the reference voltage applied to a first grid, anda voltage having a potential level different from that of the reference voltage applied to a last grid;

    whereinthe first grid is the grid closest to the plasma, and the last grid is the grid farthest from the plasma.

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