Thin film transistor, electro-optical device, and electronic apparatus
First Claim
Patent Images
1. A thin film transistor comprising:
- a source electrode and a drain electrode which are disposed to face each other;
an organic semiconductor layer provided at least between the source electrode and the drain electrode;
a plurality of gate lines extending over the source electrode, the organic semiconductor layer, and the drain electrode; and
a gate insulating layer interposed between the source electrode, the drain electrode, and the organic semiconductor layer and the plurality of gate lines.
2 Assignments
0 Petitions
Accused Products
Abstract
A thin film transistor includes a source electrode and a drain electrode which are disposed to face each other, an organic semiconductor layer provided at least between the source electrode and the drain electrode, a plurality of gate lines extending over the source electrode, the organic semiconductor layer, and the drain electrode, and a gate insulating layer interposed between the source electrode, the drain electrode, and the organic semiconductor layer and the plurality of gate lines.
-
Citations
8 Claims
-
1. A thin film transistor comprising:
-
a source electrode and a drain electrode which are disposed to face each other; an organic semiconductor layer provided at least between the source electrode and the drain electrode; a plurality of gate lines extending over the source electrode, the organic semiconductor layer, and the drain electrode; and a gate insulating layer interposed between the source electrode, the drain electrode, and the organic semiconductor layer and the plurality of gate lines. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
Specification