SEMICONDUCTOR DEVICE

• US 20080169537A1
• Filed: 03/12/2008
• Published: 07/17/2008
• Est. Priority Date: 01/28/1999
• Status: Active Grant

• Current Assignee: Renesas Semiconductor Package & Test Solutions Co., Ltd. (Renesas Electronics Corporation)
• Original Assignee: Renesas Electronics Corporation
• Inventors: Takahashi, Kazuya, Sato, Hiroshi, Takahashi, Yasushi, Hata, Toshiyuki, Morita, Toshiaki, Koizumi, Masahiro, Hirashima, Toshinori, Ishii, Shigeru, Ookawa, Keiichi, Kishimoto, Munehisa, KAJIWARA, Ryoichi
• Granted Patent: US 7,985,991 B2
• Time in Patent Office: Days
• US Class Current: 257/666
• CPC Class Codes: H01L 21/4814 Conductive parts
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/2612 Auxiliary members for layer connectors, e.g. spacers
• CPC Class Codes: H01L 2224/29011 comprising apertures or cavities
• CPC Class Codes: H01L 2224/29015 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/29109 Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29339 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/37011 : comprising apertures or cavities
• CPC Class Codes: H01L 2224/40095 : Kinked
• CPC Class Codes: H01L 2224/40225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45124 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45139 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48 : of an individual wire connector
• CPC Class Codes: H01L 2224/73221 : Strap and wire connectors
• CPC Class Codes: H01L 2224/73253 : Bump and layer connectors
• CPC Class Codes: H01L 2224/75251 : in the lower part of the bonding apparatus, e.g. in the apparatus chuck
• CPC Class Codes: H01L 2224/81 : using a bump connector
• CPC Class Codes: H01L 2224/81203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/83101 : as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/83138 : the guiding structures being at least partially left in the finished device
• CPC Class Codes: H01L 2224/83191 : wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83825 : Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/8385 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/83851 : being an anisotropic conductive adhesive
• CPC Class Codes: H01L 2224/84801 : Soldering or alloying
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/28 : Encapsulations, e.g. encapsulating layers, coatings, e.g. for protectionH01L23/552 takes precedence; insulating layers for contacts or interconnections H01L23/5329
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/495 : Lead-frames or other flat leads H01L23/498 takes precedence; lead frame interconnections between components H01L23/52
• CPC Class Codes: H01L 23/4952 : the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49548 : Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 23/49555 : the bent parts being the outer leads
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/49582 : Metallic layers on lead frames
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 29/7833 : with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/0133 : Ternary Alloys
• CPC Class Codes: H01L 2924/0134 : Quaternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18301 : being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H05K 3/3426 : characterised by the leads

Abstract

A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

Claims

1. A semiconductor device comprising:

a semiconductor substrate with a MOSFET, the semiconductor substrate having a first major surface and a second major surface opposite to and above the first major surface;

an electrode for main current of the MOSFET disposed on the first major surface;

an electrode for control of the MOSFET disposed on the first major surface;

a rear plane electrode of the MOSFET disposed on the second major surface;

an external connection terminal electrically connected to the rear plane electrode; and

wherein the external connection terminal contains a first part, a second part and a third part, the first part is positioned over the rear plane electrode, the third part is positioned below the second major surface and the third part is connected via the second part to the first part.

2. A semiconductor device according to claim 1, wherein the third part is adapted for solder connection.

3. A semiconductor device according to claim 1, wherein the electrode for main current, the electrode for control and the rear plane electrode are a source electrode, a gate electrode and a drain electrode, respectively.

4. A semiconductor device according to claim 1, wherein the third part of the external connection terminal is longer than the rear plane electrode in a same direction.

5. A semiconductor device according to claim 1,

wherein the semiconductor chip has side surfaces which cross the first and second major surfaces;

and

wherein the second part of the external connection terminal faces toward one of the side surfaces.

6. A semiconductor device according to claim 1, wherein the external connection terminal is comprised of Cu.

7. A semiconductor device according to claim 1, wherein the electrode for main current and the electrode for control are comprised of Al.

8. A semiconductor device according to claim 1, wherein the semiconductor device is a surface mounting type device.

9. A semiconductor device according to claim 1, wherein the MOSFET is a power MOSFET.

10. A semiconductor device according to claim 1,

wherein the electrode for main current and the electrode for control are located within a plan view area of the first major surface of the semiconductor substrate;

and

wherein the third part of the external connection terminal is located outside the plan view area of the first major surface.

11. A semiconductor device comprising:

a semiconductor substrate with a MOSFET, the semiconductor substrate having a first major surface and a second major surface opposite to and above the first major surface;

an electrode for main current of the MOSFET disposed on the first major surface;

an electrode for control of the MOSFET disposed on the first major surface;

a rear plane electrode of the MOSFET disposed on the second major surface;

an external connection terminal electrically connected to the rear plane electrode;

wherein the external connection terminal contains a first part, a second part and a third part, the first part is positioned over the rear plane electrode, the third part is positioned below the second major surface and the third part is connected via the second part to the first part;

wherein the electrode for main current and the electrode for control are located within a plan view area of the first major surface of the semiconductor substrate; and

wherein the third part of the external connection terminal is located outside the plan view area of the first major surface.

12. A semiconductor device according to claim 11, wherein the third part is adapted for solder connection.

13. A semiconductor device according to claim 11, wherein the electrode for main current, the electrode for control and the rear plane electrode are a source electrode, a gate electrode and a drain electrode, respectively.

14. A semiconductor device according to claim 11, wherein the third part of the external connection terminal is longer than the rear plane electrode in a same direction.

15. A semiconductor device according to claim 11,

wherein the semiconductor chip has side surfaces which cross the first and second major surfaces;

and

wherein the second part of the external connection terminal faces toward one of the side surfaces.

16. A semiconductor device according to claim 11, wherein the external connection terminal is comprised of Cu.

17. A semiconductor device according to claim 11, wherein the electrode for main current and the electrode for control are comprised of Al.

18. A semiconductor device according to claim 11, wherein the semiconductor device is a surface mounting type device.

19. A semiconductor device according to claim 11, wherein the MOSFET is a power MOSFET.

20. A semiconductor device for mounting on a wiring substrate having connection terminals thereon, the semiconductor device comprising:

a semiconductor substrate with a MOSFET, the semiconductor substrate having a first major surface and a second major surface opposite to the first major surface, the first major surface being faced toward the wiring substrate;

an electrode for main current of the MOSFET disposed on the first major surface;

an electrode for control of the MOSFET disposed on the first major surface;

a rear plane electrode of the MOSFET disposed on the second major surface; and

an external connection terminal electrically connected to the rear plane electrode;

wherein the connection terminals on the wiring substrate include a connection terminal for main current, a connection terminal for control and a connection terminal for rear plane electrode;

wherein the external connection terminal contains a first part, a second part and a third part, the first part is positioned over the rear plane electrode, the third part is adapted for solder connection to the connection terminal for rear plane electrode on the wiring substrate and the third part is connected via the second part to the first part; and

wherein the electrode for main current and the electrode for control of the MOSFET are faced toward the connection terminal for main current and the connection terminal for control, respectively, and adapted for electrical connection to the connection terminal for main current and the connection terminal for control, respectively.

21. A semiconductor device according to claim 20, wherein the electrode for main current, the electrode for control and the rear plane electrode are a source electrode, a gate electrode and a drain electrode, respectively.

22. A semiconductor device according to claim 20,

wherein the electrode for main current and the electrode for control are located within a plan view area of the first major surface of the semiconductor substrate;

and

wherein the third part of the external connection terminal is located outside the plan view area of the first major surface.

23. A semiconductor device according to claim 20, wherein the third part of the external connection terminal is longer than the rear plane electrode in a same direction.

24. A semiconductor device according to claim 20, wherein the external connection terminal is comprised of Cu.

25. A semiconductor device according to claim 20, wherein the electrode for main current and the electrode for control are comprised of Al.

26. A semiconductor device according to claim 20, wherein the semiconductor device is a surface mounting type device.

27. A semiconductor device according to claim 20, wherein the MOSFET is a power MOSFET

28. A surface mounting type semiconductor device for mounting on a wiring substrate having connection terminals thereon, the semiconductor device comprising:

a semiconductor substrate with a power MOSFET, the semiconductor substrate having a first major surface and a second major surface opposite to the first major surface, the first major surface being faced toward the wiring substrate;

a source electrode of the power MOSFET disposed on the first major surface;

a gate electrode of the power MOSFET disposed on the first major surface;

a drain electrode of the power MOSFET disposed on the second major surface;

a conductive member electrically connected to the drain electrode;

wherein the connection terminals on the wiring substrate include a source connection terminal, a gate connection terminal and a drain connection terminal;

wherein the conductive member contains a first part, a second part and a third part, the first part is positioned over the drain electrodes, the third part is adapted for connection to the drain connection terminal on the wiring substrate and the third part is connected via the second part to the first part;

wherein the source electrode and the gate electrode of the power MOSFET are faced toward the source connection terminal and the drain connection terminal, respectively, and adapted for electrical connection to the source connection terminal and the drain connection terminal, respectively;

wherein the source electrode and the gate electrode are located within a plan view area of the first major surface of the semiconductor substrate; and

wherein the third part of the conductive member is located outside the plan view area of the first major surface.

29. A semiconductor device according to claim 28, wherein the third part of the conductive member is longer than the drain electrode in a same direction.

30. A semiconductor device according to claim 28,

wherein the conductive member is comprised of Cu;

and

wherein the source electrode and the gate electrode are comprised of Al.