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SEMICONDUCTOR DEVICE

  • US 20080169537A1
  • Filed: 03/12/2008
  • Published: 07/17/2008
  • Est. Priority Date: 01/28/1999
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate with a MOSFET, the semiconductor substrate having a first major surface and a second major surface opposite to and above the first major surface;

    an electrode for main current of the MOSFET disposed on the first major surface;

    an electrode for control of the MOSFET disposed on the first major surface;

    a rear plane electrode of the MOSFET disposed on the second major surface;

    an external connection terminal electrically connected to the rear plane electrode; and

    wherein the external connection terminal contains a first part, a second part and a third part, the first part is positioned over the rear plane electrode, the third part is positioned below the second major surface and the third part is connected via the second part to the first part.

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