Fabrication of a Micro-Electromechanical System (Mems) Device From a Complementary Metal Oxide Semiconductor (Cmos)
First Claim
1. A method of fabricating a micro-electromechanical system (MEMS) device from a complementary metal oxide semiconductor (CMOS) having a silicon layer and an oxide layer, the oxide layer being disposed on the silicon layer and having at least one metal layer disposed therein, the method comprising:
- etching the silicon layer of the CMOS to form a trench through the silicon layer to expose a portion of the oxide layer;
depositing a silicon oxide layer on the silicon layer and exposed portion of the oxide layer within the trench;
etching the silicon oxide layer deposited on the exposed portion of the oxide layer to expose a portion of the metal disposed within the oxide layer;
electrodepositing a conductor within the trench, the conductor extending through the trench to the exposed portion of the metal; and
etching the silicon layer of the CMOS to remove portions of the silicon layer adjacent the conductor.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of fabricating a micro-electromechanical system (MEMS) device from a complementary metal oxide semiconductor (CMOS) having a silicon layer and an oxide layer, the oxide layer being on the silicon layer and containing at least one metal layer. The method includes etching the silicon layer of the CMOS to form a trench through the silicon layer to expose a portion of the oxide layer. The method also includes depositing a silicon oxide layer on the silicon layer and on an exposed portion of the oxide layer within the trench. Additionally, the method includes etching the silicon oxide layer deposited on the exposed portion of the oxide layer to expose a portion of the metal within the oxide layer. The method further includes electrodepositing a conductor within the trench such that the conductor extends through the trench to the exposed portion of the metal and etching the silicon layer of the CMOS to remove portions of the silicon layer adjacent the conductor.
-
Citations
20 Claims
-
1. A method of fabricating a micro-electromechanical system (MEMS) device from a complementary metal oxide semiconductor (CMOS) having a silicon layer and an oxide layer, the oxide layer being disposed on the silicon layer and having at least one metal layer disposed therein, the method comprising:
-
etching the silicon layer of the CMOS to form a trench through the silicon layer to expose a portion of the oxide layer; depositing a silicon oxide layer on the silicon layer and exposed portion of the oxide layer within the trench; etching the silicon oxide layer deposited on the exposed portion of the oxide layer to expose a portion of the metal disposed within the oxide layer; electrodepositing a conductor within the trench, the conductor extending through the trench to the exposed portion of the metal; and etching the silicon layer of the CMOS to remove portions of the silicon layer adjacent the conductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method of fabricating a micro-electromechanical system (MEMS) device from a complementary metal oxide semiconductor (CMOS) having a silicon layer and an oxide layer, the oxide layer being disposed on the silicon layer and having a metal disposed therein, the method comprising:
-
etching the silicon layer of the CMOS to form a trench through the silicon layer to expose a portion of the oxide layer; depositing a silicon oxide layer on the silicon layer and exposed portion of the oxide layer within the trench; etching the silicon layer deposited on the exposed portion of the oxide layer to expose a portion of the metal disposed within the oxide layer; electiodepositing a conductor within the trench, the metal core extending through the trench to the exposed portion of the metal; etching the silicon layer of the CMOS to remove portions of the silicon layer adjacent the conductor; etching portions of the oxide layer adjacent the conductor to form at least one trench adjacent the conductor defined by sidewalls of the silicon layer on which a layer of oxide remains deposited forming a dielectric layer over the silicon layer and the conductor; electrodepositing a permalloy within the at least one trench adjacent the conductor; etching the oxide layer to form a trench in a side of the oxide layer opposite the side in which the at least one trench adjacent the conductor is formed to form an opposing side trench; and electrodepositing in the opposing side trench a permalloy. - View Dependent Claims (12, 13, 14)
-
-
15. A micro-electromechanical (MEMS) device, comprising:
-
a silicon substrate; an oxide layer disposed on said silicon substrate and containing therein at least one transistor and at least one conducting layer; and at least one conductor formed within said silicon substrate and connected to the at least one conducting layer. - View Dependent Claims (16, 17, 18, 19, 20)
-
Specification