INTERCONNECT STRUCTURE ENCASED WITH HIGH AND LOW k INTERLEVEL DIELECTRICS
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Accused Products
Abstract
A structure for improving the electrostatic discharge robustness of an integrated circuit having an electrostatic discharge (ESD) device and a receiver network connected to a pad by interconnects. The interconnect between the pad and the ESD device has a high-k material placed adjacent to at least one surface of the interconnect and extending over the thermal diffusion distance of the interconnect. The high-k material improves the critical current density of the interconnect by increasing the heat capacity and thermal conductivity of the interconnect. The high-k material can be placed on the sides, top and/or bottom of the interconnect. In multiple wire interconnects, the high-k material is placed between the wires of the interconnect. A low-k material is placed beyond the high-k material to reduce the capacitance of the interconnect. The combination of low-k and high-k materials provides an interconnect structure with improved ESD robustness and low capacitance that is well suited for an ESD device. The interconnect to the receiver, which does not carry a high current, is surrounded by a low-k material for reduced capacitance and performance advantages.
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Citations
32 Claims
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1-20. -20. (canceled)
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21. An integrated circuit apparatus, comprising:
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an electrostatic discharge (ESD) device; a pad; and a wiring level on a substrate comprising; an interconnect comprising a plurality of interconnect wires having a common electrical node electrically connecting said pad and said ESD device; a high-k material substantially filling at least a region in between said interconnect wires, said region extending from a sidewall of one of said interconnect wires to a sidewall of an adjacent one of said interconnect wires, said high-k material for increasing an electrostatic discharge robustness of the interconnect; and a low-k material adjacent to said interconnect and located outside of said region that is substantially filled by said high-k material for reducing a capacitance of the interconnect. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29)
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30. An interconnect structure, comprising:
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a metal conductor comprising a plurality of interconnect wires having a common electrical node in a wiring level on a substrate; a high-k material substantially filling at least a region in between said interconnect wires, said region extending from a sidewall of one of said interconnect wires to a sidewall of an adjacent one of said interconnect wires, said high-k material for increasing an electrostatic discharge robustness of the interconnect structure; and a low-k material adjacent to said metal conductor and located outside of said region that is substantially filled by said high-k material for reducing a capacitance of the interconnect structure. - View Dependent Claims (31, 32)
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Specification