Side emitting illumination systems incorporating light emitting diodes
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Abstract
The invention is a reflective light emitting diode. The light emitting diode reflects the externally incident light, thereby increasing the effective brightness of the light emitting diode. The light emitting diode reflects externally incident light with a reflectivity greater than 40 percent.
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Citations
46 Claims
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1-23. -23. (canceled)
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24. A reflective light emitting diode comprising
a first doped semiconductor layer having an output surface; -
a second doped semiconductor layer, said second doped semiconductor layer and said first doped semiconductor layer having opposite n and p conductivity types; an active region interposed between said first doped semiconductor layer and said second doped semiconductor layer, said active region in electrical contact with said first doped semiconductor layer and said second doped semiconductor layer; a first reflecting electrode in electrical contact with said first doped semiconductor layer; a second reflecting electrode in electrical contact with said second doped semiconductor layer; wherein said active region of said light emitting diode emits internally generated light through said output surface of said first doped semiconductor layer when a voltage is applied between said first reflecting electrode and said second reflecting electrode; and wherein a portion of externally incident light incident on said light emitting diode is reflected by said first reflecting electrode and a portion of externally incident light incident on said light emitting diode is transmitted through said light emitting diode and reflected by said second reflecting electrode of said light emitting diode through said output surface, thereby increasing the effective brightness of said light emitting diode. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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46. A reflective light emitting diode comprising
a first doped semiconductor layer having an output surface; -
a second doped semiconductor layer, said second doped semiconductor layer and said first doped semiconductor layer having opposite n and p conductivity types; an active region interposed between said first doped semiconductor layer and said second doped semiconductor layer, said active region in electrical contact with said first doped semiconductor layer and said second doped semiconductor layer; a first reflecting electrode in electrical contact with said first doped semiconductor layer;
wherein said first reflecting electrode only partially covers said first doped semiconductor layer, said output surface of said first doped semiconductor layer being formed from the portions of said first doped semiconductor layer not covered by said first reflecting electrode;a second reflecting electrode in electrical contact with said second doped semiconductor layer; wherein said active region of said light emitting diode emits internally generated light through said output surface of said first doped semiconductor layer when a voltage is applied between said first reflecting electrode and said second reflecting electrode; wherein the inner surface of said first reflecting electrode is adjacent to said first doped semiconductor layer;
said inner surface of said first reflecting electrode is reflective to said internally generated light emitted by said active region and to said externally incident light, wherein the outer surface of said first reflecting electrode is opposite said inner surface of said first reflecting electrode and said outer surface of said first reflecting electrode is reflective to said externally incident light.wherein the inner surface of said second reflecting electrode is adjacent to said second doped semiconductor layer;
said inner surface of said second reflecting electrode is reflective to said internally generated light emitted by said active region and to said externally incident light; andwherein a portion of externally incident light incident on said light emitting diode is reflected by said first reflecting electrode and a portion of externally incident light incident on said light emitting diode is transmitted through said light emitting diode and reflected by said second reflecting electrode of said light emitting diode through said output surface, thereby increasing the effective brightness of said light emitting diode.
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Specification