UNIAXIAL STRAIN RELAXATION OF BIAXIAL-STRAINED THIN FILMS USING ION IMPLANTATION
First Claim
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1. A method for uniaxially relaxing strain in a biaxially strained semiconductor film comprising:
- providing a patterned structure on a surface of a biaxially strained semiconductor film, said patterned structure protects at least one portion of said film while leaving at least one other portion of said film exposed; and
performing an ion implant into said at least one other portion of said film not covered by said patterned structure, wherein said ion implant damages said at least one other portion of said film and causes strain relaxation in said at least one other portion of said film, while inducing lateral strain relaxation in said at least one portion of said film That is protected by said patterned structure.
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Abstract
A method for achieving uniaxial strain on originally biaxial-strained thin films after uniaxial strain relaxation induced by ion implantation is provided. The biaxial-strained thin film receives ion implantation after being covered by a patterned implant block structure. The strain in the uncovered region is relaxed by ion implantation, which induces the lateral strain relaxation in the covered region. When the implant block structure is narrow (dimension is comparable to the film thickness), the original biaxial strain will relax uniaxially in the lateral direction.
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Citations
19 Claims
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1. A method for uniaxially relaxing strain in a biaxially strained semiconductor film comprising:
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providing a patterned structure on a surface of a biaxially strained semiconductor film, said patterned structure protects at least one portion of said film while leaving at least one other portion of said film exposed; and performing an ion implant into said at least one other portion of said film not covered by said patterned structure, wherein said ion implant damages said at least one other portion of said film and causes strain relaxation in said at least one other portion of said film, while inducing lateral strain relaxation in said at least one portion of said film That is protected by said patterned structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for uniaxially relaxing strain in a biaxially strained semiconductor film comprising:
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forming an ion implant block mask over a biaxially strained film, said ion implant block mask protects at least one portion of said film while leaving at least one other portion of said film exposed; and performing an ion implant into said at least one other portion of said film not covered by said ion implant block mask, wherein said ion implant damages said at least one other portion of said film and causes strain relaxation in said at least one other portion of said film, while inducing lateral strain relaxation in said at least one portion of said film that is protected by said ion implant block mask. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method for uniaxially relaxing strain in a biaxially strained semiconductor film comprising
providing a patterned structure comprising a patterned gate stack and a sidewall spacer on a surface of a biaxially strained semiconductor film, said patterned structure protects at least one portion of said film while leaving at least one other portion of said film exposed, the patterned gate stack and the sidewall spacer having a length dimension less than five times a thickness of said biaxially strained semiconductor film; - and
performing an ion implant into said at least one other portion of said film not covered by said patterned structure, wherein said ion implant damages said at least one other portion of said film and causes strain relaxation in said at least one other portion of said film, while inducing lateral strain relaxation in said at least one portion of said film that is protected by said patterned structure. - View Dependent Claims (16, 17, 18, 19)
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Specification