Polishing compound and method for producing semiconductor integrated circuit device

• US 20080171441A1
• Filed: 12/28/2007
• Published: 07/17/2008
• Est. Priority Date: 06/28/2005
• Status: Abandoned Application

• Current Assignee: AGC Seimi Chemical Co., Ltd. (AGC, Inc.), Asahi Glass Company, Limited (AGC, Inc.)
• Original Assignee: AGC Seimi Chemical Co., Ltd. (AGC, Inc.), Asahi Glass Company, Limited (AGC, Inc.)
• Inventors: Takemiya, Satoshi
• Application Number:
  US12/003,668
• Publication Number:
  US 20080171441A1
• Time in Patent Office: Days
• US Class Current: 438/693
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: C09K 3/1463 Aqueous liquid suspensions
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation

Abstract

In polishing of a surface to be polished in production of a semiconductor integrated circuit device, it is possible to obtain a flat surface of an insulating layer having an embedded metal wiring. Further, it is possible to obtain a semiconductor integrated circuit device having a highly planarized multilayer structure.

A polishing compound for chemical mechanical polishing to polish a surface to be polished for a semiconductor integrated circuit device, which comprises abrasive particles (A) having an average primary particle size in a range of from 5 to 300 nm and an association ratio in the polishing compound in a range from 1.5 to 5, an oxidizing agent (B), a protective film-forming agent (C), an acid (D), a basic compound (E) and water (F).

Claims

1. A polishing compound for chemical mechanical polishing to polish a surface to be polished in production of a semiconductor integrated circuit device, which comprises abrasive particles (A) having an average primary particle size in a range of from 5 to 300 nm and an association ratio in the polishing compound in a range from 1.5 to 5, an oxidizing agent (B), a protective film-forming agent (C), an acid (D), a basic compound (E) and water (F).

2. The polishing compound according to claim 1, wherein the protective film-forming agent (C) is made of at least one material selected from the group consisting of a compound represented by the formula (1), wherein R₁ is a hydrogen atom, a C_1-4 alkyl group, a C_1-4 alkoxy group or, a carboxyl group, and a compound represented by the formula (2), wherein each of R₂ and R₃ which are independent of each other, is a hydrogen atom, a C_1-4 alkyl group, a C_1-4 alkoxy group, a carboxyl group or an amino group:

3. The polishing compound according to claim 1, wherein the abrasive particles (A) are made of at least one material selected from the group consisting of silica, alumina, cerium oxide, zirconium oxide, titanium oxide, tin oxide, zinc oxide and manganese oxide.

4. The polishing compound according to claim 3, wherein the abrasive particles (A) are made of colloidal silica.

5. The polishing compound according to claim 1, which comprises from 0.1 to 20 mass % of the abrasive particles (A), from 0.01 to 50 mass % of the oxidizing agent (B), from 0.001 to 5 mass % of the protective film-forming agent (C), from 0.01 to 50 mass % of the acid (D), from 0.01 to 50 mass % of the basic compound (E) and from 40 to is 98 mass % of water (F), based on the total mass of the above mentioned polishing compound being 100 mass %.

6. The polishing compound according to claim 1, which further contains a pH buffer and has a pH within a range of from 2 to 10.

7. The polishing compound according to claim 1, which is a polishing compound for polishing a surface to be polished in a case where a barrier layer and a metal wiring layer are formed in this order on an insulating layer.

8. The polishing compound according to claim 1, which is a polishing compound for polishing a surface to be polished in a case where a cap layer, a barrier layer and a metal wiring layer are formed in this order on an insulating layer made of a low dielectric constant material.

9. The polishing compound according to claim 7, wherein the above metal wiring layer is made of copper, and the barrier layer is made of at least one member selected from the group consisting of tantalum, a tantalum alloy or a tantalum compound.

10. The polishing compound according to claim 8, wherein the above metal wiring layer is made of copper, and the barrier layer is made of at least one member selected from the group consisting of tantalum, a tantalum alloy or a tantalum compound.

11. A method for producing of a semiconductor integrated circuit device having a metal wiring layer embedded in an insulating layer, which comprises using the polishing compound as defined in claim 1.