NONVOLATILE MEMORY DEVICES INCLUDING MULTIPLE USER-SELECTABLE PROGRAM MODES AND RELATED METHODS OF OPERATION

• US 20080172520A1
• Filed: 08/14/2007
• Published: 07/17/2008
• Est. Priority Date: 01/17/2007
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Bong-Ryeol
• Application Number:
  US11/838,348
• Publication Number:
  US 20080172520A1
• Time in Patent Office: Days
• US Class Current: 711/103
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 2211/5641 Multilevel memory having cells with different number of storage levels

Abstract

A memory device includes a flash memory, a memory controller, and an MLC mode selector. The flash memory includes at least one memory cell configured to store multi-bit data therein. The MLC mode selector is configured to generate a mode selection signal indicating whether to store single-bit data or multi-bit data in the memory cell responsive to a user selection. The memory controller is configured to operate the flash memory in a single-level cell (SLC) program mode to store the single-bit data or a multi-level cell (MLC) program mode to store the multi-bit data based on the mode selection signal from the MLC mode selector. The memory device may be configured to store program mode information for the memory cell indicating whether the single-bit data or the multi-bit data is stored therein. Related systems and methods of operation are also discussed.

Claims

1. A memory device comprising:

a flash memory including at least one memory cell configured to store multi-bit data therein;

an MLC mode selector configured to generate a mode selection signal indicating whether to store single-bit data or multi-bit data in the memory cell responsive to a user selection; and

a memory controller configured to operate the flash memory in a single-level cell (SLC) program mode to store the single-bit data or a multi-level cell (MLC) program mode to store the multi-bit data based on the mode selection signal from the MLC mode selector.

2. The memory device of claim 1, wherein the flash memory is configured to store program mode information for the memory cell indicating whether the single-bit data or the multi-bit data is stored therein, and wherein the memory controller is configured to execute a reading operation in the SLC mode or the MLC mode based on the program mode information.

3. The memory device of claim 2, wherein the flash memory comprises a memory cell array configured to store the program mode information.

4. The memory device of claim 3, wherein the memory cell array comprises data fields and spare fields, and wherein the program mode information is stored in a spare field of the memory cell array.

5. The memory device of claim 3, wherein the memory cell array comprises a plurality of memory blocks, and wherein the program mode information is stored in one of the plurality of memory blocks.

6. The memory device of claim 1, wherein the flash memory and the memory controller are integrated in a memory card.

7. The memory device of claim 6, wherein the MLC mode selector comprises a button on an external surface of the memory card.

8. The memory device of claim 6, wherein the MLC mode selector comprises a switch on an external surface of the memory card.

9. The memory device of claim 1, wherein the memory controller comprises:

a control unit configured to control programming of the flash memory in the SLC mode or the MLC mode based on the mode selection signal; and

a buffer memory unit configured to store data to be programmed into the flash memory and/or data read from the flash memory.

10. The memory device of claim 1, wherein the flash memory comprises NAND-type flash memory.

11. A memory system comprising:

a memory controller configured to operate a flash memory device in a single-level cell (SLC) program mode to store single-bit data in a memory cell thereof or in a multi-level cell (MLC) program mode to store multi-bit data in the memory cell based on a mode selection signal generated responsive to a user selection, wherein the memory controller is further configured to store program mode information for the memory cell indicating whether the single-bit data or the multi-bit data is stored therein.

12. The memory system of claim 11, further comprising the flash memory device, wherein the flash memory device and the memory controller are integrated in a memory card.

13. The memory system of claim 12, further comprising:

an MLC mode selector configured to generate the mode selection signal that indicates whether to store the single-bit data or the multi-bit data in the memory cell responsive to the user selection,

wherein the MLC mode selector is external to the memory card.

14. The memory system of claim 13, wherein the MLC mode selector comprises a button on an external surface of the memory card.

15. The memory system of claim 13, wherein the MLC mode selector comprises a switch on an external surface of the memory card.

16. The memory system of claim 11, wherein the memory controller comprises:

a control unit configured to control programming of the flash memory device in the SLC mode or the MLC mode based on the mode selection signal; and

a buffer memory unit configured to store data to be programmed into the flash memory device and/or data read from the flash memory device.

17. The memory system of claim 16, wherein the control unit comprises an MLC mode storage unit configured to store the program mode information.

18. The memory system of claim 17, wherein the MLC mode storage unit comprises an electrically erasable and programmable read-only memory.

19. The memory system of claim 11, wherein the memory controller is configured to execute a reading operation in the SLC mode or the MLC mode based on the program mode information.

20. The memory system of claim 12, wherein the flash memory device comprises a NAND flash memory card.

21. A method of operating a memory device, the method comprising:

generating a mode selection signal indicating whether to store single-bit data or multi-bit data in a memory cell of a flash memory device that is configured to store multi-bit data therein responsive to a user selection; and

operating the flash memory device in a single-level cell (SLC) program mode to store the single-bit data or a multi-level cell (MLC) program mode to store the multi-bit data based on the mode selection signal.

22. The method of claim 21, further comprising:

storing program mode information for the memory cell indicating whether the single-bit data or the multi-bit data is stored therein.

23. The method of claim 22, further comprising:

executing a reading operation in the SLC mode or the MLC mode based on the program mode information.