Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel
First Claim
1. A substrate processing apparatus comprising:
- a reaction tube having in an interior thereof a processing chamber in which a plurality of substrates disposed in a direction perpendicular to a substrate processing surface can be processed; and
a heating device provided to surround an outer circumference of the reaction tube,a gas inlet tube being provided on a side face of said reaction tube in a region for processing a substrate inside said reaction tube, so as to reach at least an outside of said heating device, anda gas spouting port being disposed in the gas inlet tube in a slit form so as to straddle at least a plurality of the substrates in a direction perpendicular to said substrate processing surface, for spouting gas from said gas inlet tube into said processing chamber.
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Accused Products
Abstract
A substrate processing apparatus that affords improved uniformity to in-plane wafer and interwafer film thickness of a large number of wafers on which a film is simultaneously formed, having: a reaction tube having in an interior thereof a processing chamber in which a plurality of substrates disposed in a direction perpendicular to a substrate processing surface can be processed; and a heating device provided to surround an outer circumference of the reaction tube, a gas inlet tube being provided on a side face of the reaction tube in a region for processing a substrate inside the reaction tube, so as to reach at least an outside of the heating device; and a gas spouting port being disposed in this gas inlet tube in a slit form so as to straddle at least a plurality of the substrates in a direction perpendicular to the substrate processing surface, for spouting gas from the gas inlet tube into the processing chamber.
373 Citations
20 Claims
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1. A substrate processing apparatus comprising:
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a reaction tube having in an interior thereof a processing chamber in which a plurality of substrates disposed in a direction perpendicular to a substrate processing surface can be processed; and a heating device provided to surround an outer circumference of the reaction tube, a gas inlet tube being provided on a side face of said reaction tube in a region for processing a substrate inside said reaction tube, so as to reach at least an outside of said heating device, and a gas spouting port being disposed in the gas inlet tube in a slit form so as to straddle at least a plurality of the substrates in a direction perpendicular to said substrate processing surface, for spouting gas from said gas inlet tube into said processing chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A reaction vessel in a cylindrical shape having in an interior thereof a processing chamber in which a plurality of substrates disposed in a direction perpendicular to a substrate processing surface can be processed, comprising:
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a gas inlet tube and a gas exhaust tube being provided on a side face of said reaction tube in a region for processing a substrate inside said reaction tube, said gas inlet tube and said gas exhaust tube extending in a direction perpendicular to said side face of said reaction tube, and a gas spouting port being disposed in at least said gas inlet tube in a form so as to straddle at least a plurality of the substrates in a direction perpendicular to said substrate processing surface, for spouting gas from said gas inlet tube into said processing chamber.
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Specification