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OXYGEN PLASMA CLEAN TO REMOVE CARBON SPECIES DEPOSITED ON A GLASS DOME SURFACE

  • US 20080173326A1
  • Filed: 01/23/2007
  • Published: 07/24/2008
  • Est. Priority Date: 01/23/2007
  • Status: Active Grant
First Claim
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1. A method of cleaning a process chamber, comprising:

  • providing a process chamber having carbon deposits on inner surfaces of a dielectric dome;

    introducing a first gas comprising one or more oxidizing gases into the process chamber at a flow rate of between about 0.32 sccm/cm2 and about 1.9 sccm/cm2 while maintaining a first pressure in the process chamber of between about 2 mTorr and about 25 mTorr;

    providing a first RF power at a frequency of between about 5 MHz and about 20 MHz to a substrate support member disposed in the process chamber and providing a second RF power at a frequency of between about 400 KHz and about 10 MHz to inductive coils surrounding the dielectric dome while maintaining a plasma of the first gas to react the one or more oxidizing gases with the carbon deposits to produce volatile compounds comprising carbon;

    terminating the first RF power, second RF power, and the first gas;

    introducing a second gas comprising one or more reducing gases to the process chamber at a flow rate of between about 0.16 sccm/cm2 and about 1.3 sccm/cm2, while maintaining a second pressure in the process chamber of between about 5 mTorr and about 60 mTorr;

    providing the first RF power at a frequency of between about 5 MHz and about 20 MHz to the substrate support member and providing the second RF power at a frequency of between about 400 KHz and about 10 MHz to the inductive coils while maintaining a plasma of the second gas to react the one or more reducing gases with the one or more oxidizing gases not evacuated from the process chamber;

    evacuating the chamber; and

    terminating the first RF power, the second RF power, and the second gas.

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