THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME

• US 20080173870A1
• Filed: 10/30/2007
• Published: 07/24/2008
• Est. Priority Date: 01/24/2007
• Status: Abandoned Application

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Bae, Yang-ho, Jeong, Chang-oh, Kim, Byeong-beom
• Application Number:
  US11/929,586
• Publication Number:
  US 20080173870A1
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52

Abstract

A thin film transistor substrate having low resistivity and reduced contact resistance includes a gate wiring line formed on an insulating substrate, a data wiring line crossing the gate wiring line while being insulated from the gate wiring line, and a pixel electrode connected to a portion of the data wiring line and including a zinc oxide layer pattern doped with a dopant and an anti-oxidizing substance layer pattern.

Claims

1. A thin film transistor substrate comprising:

a gate wiring line formed on an insulating substrate;

a data wiring line crossing the gate wiring line while being insulated from the gate wiring line; and

a pixel electrode connected to a portion of the data wiring line and including a zinc oxide layer pattern doped with a dopant and an anti-oxidizing substance layer pattern.

2. The thin film transistor substrate of claim 1, wherein the dopant is a nonmetallic element having an atomic value lower than the atomic value of an oxygen atom.

3. The thin film transistor substrate of claim 2, wherein the dopant is formed of one or more selected from the group consisting of F and Cl.

4. The thin film transistor substrate of claim 1, wherein the dopant is a metallic element having an atomic value higher than the atomic value of zinc.

5. The thin film transistor substrate of claim 4, wherein the dopant is formed of one or more selected from the group consisting of B, Al, Ga, In, Si, Ge, Sn, Sc, Ti, Co, Cu, Y, and Hf.

6. The thin film transistor substrate of claim 5, wherein the composition ratio of zinc oxide and the dopant is 100:

1 to 100;

10 in terms of weight percent.

7. The thin film transistor substrate of claim 5, wherein the doped zinc oxide layer pattern has a thickness of 20 to 100 nm.

8. The thin film transistor substrate of claim 1, wherein the anti-oxidizing substance layer pattern is made of a nitride substance.

9. The thin film transistor substrate of claim 8, wherein the anti-oxidizing substance layer pattern has a thickness of 1 to 10 nm.

10. A method of producing a thin film transistor substrate, the method comprising:

forming a gate wiring line on an insulating substrate;

forming a data wiring line crossing the gate wiring line while being insulated from the gate wiring line; and

forming a pixel electrode connected to a portion of the data wiring line and including a zinc oxide layer pattern doped with a dopant and an anti-oxidizing substance layer pattern.

11. The method of claim 10, wherein the forming of the pixel electrode comprises:

forming a doped zinc oxide layer using a sputtering process;

forming an anti-oxidizing substance layer using a nitrogen gas; and

etching the doped zinc oxide layer and the anti-oxidizing substance layer to form the doped zinc oxide layer pattern and the anti-oxidizing substance layer pattern.

12. The method of claim 11, wherein the sputtering process is performed using an argon gas.

13. The method of claim 12, wherein flow of the argon gas is 40 to 300 sccm.

14. The method of claim 11, wherein the sputtering process is performed in a chamber at a pressure of 0.1 to 2.0 Pa.

15. The method of claim 11, wherein the anti-oxidizing substance layer is formed by the sputtering process using a gas mixture of a nitrogen gas and an argon gas.

16. The method of claim 15, wherein a flow ratio of the nitrogen gas and the argon gas used to form the anti-oxidizing substance layer is 1:

4 to 4;

1.

17. The method of claim 11, wherein the anti-oxidizing substance layer is formed using heat treatment of the doped zinc oxide layer in a nitrogen gas atmosphere.

18. The method of claim 17, wherein a temperature of the heat treatment is 100 to 300°

C.

19. The method of claim 10, wherein the dopant is a nonmetallic element having an atomic value lower than the atomic value of an oxygen atom.

20. The method of claim 19, wherein the dopant is formed of one or more selected from the group consisting of F and Cl.

21. The method of claim 10, wherein the dopant is a metallic element having an atomic value higher than the atomic value of zinc.

22. The method of claim 21, wherein the dopant is formed of one or more selected from the group consisting of B, Al, Ga, In, Si, Ge, Sn, Sc, Ti, Co, Cu, Y, and Hf.

23. The method of claim 10, wherein the anti-oxidizing substance layer pattern is made of a nitride substance.