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ENHANCED MOBILITY CMOS TRANSISTORS WITH A V-SHAPED CHANNEL WITH SELF-ALIGNMENT TO SHALLOW TRENCH ISOLATION

  • US 20080173906A1
  • Filed: 01/19/2007
  • Published: 07/24/2008
  • Est. Priority Date: 01/19/2007
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a semiconductor substrate with a substrate orientation;

    a V-shaped groove with a ridge and a first crystallographic facet and a second crystallographic facet of a semiconductor material, wherein said V-shaped groove is bounded by shallow trench isolation and said first crystallographic facet and said second crystallographic facet are joined by said ridge;

    a channel located beneath said V-shaped groove, said channel adjoining a portion of said ridge, a portion of said first crystallographic facet, and a portion of said second crystallographic facet;

    a source adjoined to said channel and located on said ridge;

    a drain adjoined to said channel and not adjoined to said source and located on said ridge;

    a gate dielectric adjoined to and located above said channel; and

    a gate conductor adjoined to said gate dielectric and not adjoined to said channel, said source and said drain.

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