MicroElectroMechanical Systems Contact Stress Sensor
First Claim
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1. A microelectromechanical systems stress sensor, comprising:
- a microelectromechanical systems body,a recess in said body,a silicon element that extends into said recess, said silicon element having limited freedom of movement within said recess, andan electrical circuit in said silicon element, said electrical circuit including a piezoresistor material.
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Abstract
A microelectromechanical systems stress sensor comprising a microelectromechanical systems silicon body. A recess is formed in the silicon body. A silicon element extends into the recess. The silicon element has limited freedom of movement within the recess. An electrical circuit in the silicon element includes a piezoresistor material that allows for sensing changes in resistance that is proportional to bending of the silicon element.
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Citations
53 Claims
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1. A microelectromechanical systems stress sensor, comprising:
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a microelectromechanical systems body, a recess in said body, a silicon element that extends into said recess, said silicon element having limited freedom of movement within said recess, and an electrical circuit in said silicon element, said electrical circuit including a piezoresistor material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A stress sensor, comprising:
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microelectromechanical systems body means for providing a base, recess means in said body means for forming an open area, silicon element means that extends into said recess means for limited movement, and electrical circuit means in said silicon element means for sensing movement of said silicon element means. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
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42. A method of producing a stress sensor, comprising the steps of:
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microprocessing a silicon body to produce a recess in said silicon body, microprocessing said silicon body to produce a silicon element that extends into said recess and has a limited freedom of movement within said recess, providing an electrical circuit including a piezoresistor material operatively connected to said silicon element and providing a measuring unit for measuring changes in electrical properties of said electrical circuit. - View Dependent Claims (43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53)
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Specification