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Configuration of high-voltage semiconductor power device to achieve three dimensionalcharge coupling

  • US 20080173969A1
  • Filed: 01/22/2007
  • Published: 07/24/2008
  • Est. Priority Date: 01/22/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a top region and a bottom region with an intermediate region disposed between said top region and said bottom region;

    a controllable current path traversing through said intermediate region;

    an insulating trench extended from said top region through said intermediate region toward said bottom region wherein said insulating trench comprising randomly and substantially uniformly distributed nano-nodules as charge-islands for electrically coupling with said intermediate region for continuously and uniformly distributing a voltage drop through said current path.

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