ELECTRODE ISOLATION METHOD AND NANOWIRE-BASED DEVICE HAVING ISOLATED ELECTRODE PAIR
First Claim
1. A method of creating isolated electrodes in a nanowire-based device comprising:
- providing a substrate that comprises a semiconductor layer having a crystal orientation and an insulating film on a surface of the semiconductor layer, the insulating film having a window to expose a portion of the surface;
selectively epitaxially growing a semiconductor feature from the surface through the window, the semiconductor feature having a vertical stem and a ledge that have the crystal orientation of the semiconductor layer, the vertical stem being in contact with the semiconductor layer through the window, the ledge being a lateral epitaxial overgrowth of the vertical stem on the insulating film; and
creating a pair of isolated electrodes from the semiconductor feature and the semiconductor layer.
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Abstract
Methods of creating isolated electrodes and integrating a nanowire therebetween each employ lateral epitaxial overgrowth of a semiconductor material on a semiconductor layer to form isolated electrodes having the same crystal orientation. The methods include selective epitaxial growth of a semiconductor feature through a window in an insulating film on the semiconductor layer. A vertical stem is in contact with the semiconductor layer through the window and a ledge is a lateral epitaxial overgrowth of the vertical stem on the insulating film. The methods further include creating a pair of isolated electrodes from the semiconductor feature and the semiconductor layer. A nanowire-based device includes the pair of isolated electrodes and a nanowire bridging between respective surfaces of the isolated electrodes of the pair.
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Citations
20 Claims
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1. A method of creating isolated electrodes in a nanowire-based device comprising:
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providing a substrate that comprises a semiconductor layer having a crystal orientation and an insulating film on a surface of the semiconductor layer, the insulating film having a window to expose a portion of the surface; selectively epitaxially growing a semiconductor feature from the surface through the window, the semiconductor feature having a vertical stem and a ledge that have the crystal orientation of the semiconductor layer, the vertical stem being in contact with the semiconductor layer through the window, the ledge being a lateral epitaxial overgrowth of the vertical stem on the insulating film; and creating a pair of isolated electrodes from the semiconductor feature and the semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of integrating a nanowire between isolated electrodes of a nanowire-based device comprising:
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providing a substrate that comprises a semiconductor layer having a crystal orientation and an insulating film on a surface of the semiconductor layer, the insulating film having a window that exposes a portion of the semiconductor layer surface; selectively epitaxially growing a semiconductor feature from the semiconductor layer through the window, the semiconductor feature having a vertical stem and a ledge with the crystal orientation of the semiconductor layer, the vertical stem being in contact with the semiconductor layer through the window, the ledge being a lateral epitaxial overgrowth of the vertical stem on the insulating film; creating a pair of isolated electrodes from the semiconductor feature and the semiconductor layer; and growing a nanowire to self-assemble between horizontal surfaces of the isolated electrodes of the pair. - View Dependent Claims (14, 15, 16, 17)
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18. A nanowire-based device having isolated electrodes comprising:
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a substrate electrode having a crystal orientation; a ledge electrode that is an epitaxial semiconductor having the crystal orientation of the substrate electrode, the ledge electrode being electrically isolated from and cantilevered above the substrate electrode; and a nanowire bridging between respective surfaces of the substrate electrode and the ledge electrode. - View Dependent Claims (19, 20)
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Specification