Semiconductor optical devices, systems and methods of manufacturing the same
First Claim
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1. A semiconductor optical device comprising:
- a silicon substrate; and
at least one Group III-V semiconductor gain layer formed on the silicon substrate, one of the silicon substrate and the at least one Group III-V semiconductor gain layer having a dispersion Bragg grating formed therein.
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Abstract
A semiconductor optical device includes a silicon substrate and a Group III-V semiconductor gain layer. The Group III-V semiconductor gain layer is formed on the silicon substrate. The silicon substrate or the Group III-V semiconductor gain layer has a dispersion Bragg grating formed therein. In a method of manufacturing a semiconductor optical device, a Group III-V semiconductor gain layer is formed on a silicon substrate. A dispersion Bragg grating is formed on the silicon substrate or the Group III-V semiconductor gain layer.
13 Citations
29 Claims
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1. A semiconductor optical device comprising:
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a silicon substrate; and at least one Group III-V semiconductor gain layer formed on the silicon substrate, one of the silicon substrate and the at least one Group III-V semiconductor gain layer having a dispersion Bragg grating formed therein. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of manufacturing a semiconductor optical device, the method comprising:
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forming a Group III-V semiconductor gain layer on a silicon substrate; and forming a dispersion Bragg grating on the silicon substrate or the semiconductor gain layer. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification