Semiconductor Light Emitting Element and Method for Manufacturing the Same
First Claim
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1. A method for manufacturing a semiconductor light emitting element, comprising:
- forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, said light emitting layer emitting light of a wavelength λ
permitted to pass through the GaP substrate;
forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and
forming a plurality of depressions and protrusions on the side surfaces by regrowing GaP thereon by MOCVD using source material gases of a group V source material including phosphorus and a group III source material including gallium at a growth temperature in a range from a lower limit equal to or higher than 350°
C. to an upper limit equal to or lower than 700°
C.
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Abstract
A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1λ to 3λ on the side surfaces.
21 Citations
4 Claims
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1. A method for manufacturing a semiconductor light emitting element, comprising:
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forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, said light emitting layer emitting light of a wavelength λ
permitted to pass through the GaP substrate;forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions on the side surfaces by regrowing GaP thereon by MOCVD using source material gases of a group V source material including phosphorus and a group III source material including gallium at a growth temperature in a range from a lower limit equal to or higher than 350°
C. to an upper limit equal to or lower than 700°
C. - View Dependent Claims (2, 3, 4)
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Specification