METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE

• US 20080176364A1
• Filed: 08/20/2007
• Published: 07/24/2008
• Est. Priority Date: 01/18/2007
• Status: Abandoned Application

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: YANG, Sung-Hoon, CHOI, Yong-Mo, KIM, Byoung-June
• Application Number:
  US11/841,336
• Publication Number:
  US 20080176364A1
• Time in Patent Office: Days
• US Class Current: 438/151
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The present invention provides a method for manufacturing a thin film transistor substrate including forming gate wires on an insulation substrate, forming oxide active layer patterns on the gate wires, forming data wires on the oxide active layer patterns so that the data wires cross the gate wires, forming a passivation film on the oxide active layer patterns and the data wires using a non-reductive reaction gas and SiH₄, and forming pixel electrodes on the passivation film

Claims

1. A method for manufacturing a thin film transistor substrate, the method comprising:

forming gate wires on an insulation substrate;

forming oxide active layer patterns on the gate wires;

forming data wires on the oxide active layer patterns, the data wires crossing the gate wires;

forming a passivation film on the oxide active layer patterns and the data wires using a non-reductive reaction gas and SiH₄; and

forming pixel electrodes on the passivation film.

2. The method of claim 1, wherein forming the passivation film comprises forming SiN_x using nitrogen (N₂) gas as the non-reductive reaction gas.

3. The method of claim 1, wherein forming the passivation film comprises forming SiOx using nitrous oxide (N₂O) as the non-reductive reaction gas.

4. The method of claim 2, wherein forming the passivation film is performed by chemical vapor deposition at a temperature of 200°

C. or less.

5. The method of claim 4, wherein the temperature is 150°

C. or less.

6. The method of claim 3, wherein forming the passivation film is performed by chemical vapor deposition at a temperature of 200°

C. or less.

7. The method of claim 6, wherein the temperature is 150°

C. or less.

8. The method of claim 2, wherein, a flux ratio of SiH₄ to the non-reductive reaction gas is 1:

10 to 1;

100.

9. The method of claim 3, wherein a flux ratio of SiH₄ to the non-reductive reaction gas is 1:

10 to 1;

100.

10. The method of claim 1, wherein the oxide active layer pattern comprises InZnO, GaInZnO, or ZnO.

11. A method for manufacturing a thin film transistor substrate, the method comprising:

forming gate wires on an insulation substrate;

forming oxide active layer patterns on the gate wires;

forming data wires on the oxide active layer patterns, the data wires crossing the gate wires;

forming a passivation film by depositing a thin film made of SiN_x on a thin film made of SiOx after depositing the thin film made of SiOx on the oxide active layer patterns and the data wires using nitrous oxide (N₂O) gas and SiH₄; and

forming pixel electrodes on the passivation film.

12. The method of claim 11, wherein depositing the thin film made of SiOx and depositing the thin film made of SiN_x are performed by an in-situ process.

13. The method of claim 11, wherein forming the passivation film is performed by chemical vapor deposition at a temperature of 200°

C. or less.

14. The method of claim 13, wherein the temperature is 150°

C. or less.

15. The method of claim 11, wherein a flux ratio of SiH₄ to nitrous oxide (N₂O) gas is 1:

10 to 1;

100.

16. The method of claim 11, wherein the oxide active layer pattern comprises InZnO, GaInZnO, or ZnO.

17. A method for manufacturing a thin film transistor substrate, the method comprising:

forming gate wires on an insulation substrate;

forming oxide active layer patterns on the gate wires;

forming data wires on the oxide active layer patterns, the data wires crossing the gate wires;

exposing the oxide active layer patterns to plasma using a non-reductive reaction gas;

forming a passivation film on the oxide active layer patterns and the data wires; and

forming pixel electrodes on the passivation film.

18. The method of claim 17, wherein the non-reductive reaction gas is nitrogen (N₂) gas or nitrous oxide (N₂O) gas.

19. The method of claim 17, wherein the passivation film is formed by an in-situ process after the oxide active layer patterns are exposed to plasma.

20. The method of claim 17, wherein the oxide active layer patterns are exposed to plasma at a temperature of 200°

C. or less.

21. The method of claim 17, wherein the oxide active layer comprises InZnO, GaInZnO, or ZnO.

22. A method for manufacturing a thin film transistor substrate, the method comprising:

forming gate wires on an insulation substrate;

forming oxide active layer patterns on the gate wires;

forming data wires on the oxide active layer patterns, the data wires crossing the gate wires;

forming a passivation film on the oxide active layer patterns and the data wires; and

forming pixel electrodes on the passivation film,

wherein the forming of the passivation film is performed by chemical vapor deposition at a temperature of 200°

C. or less.

23. The method of claim 22, wherein the temperature is 150°

C. or less.

24. The method of claim 22, wherein forming the passivation film is performed using a non-reductive reaction gas and SiH₄.