Method of manufacturing semiconductor device

• US 20080176407A1
• Filed: 01/23/2008
• Published: 07/24/2008
• Est. Priority Date: 01/24/2007
• Status: Abandoned Application

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: Nagakura, Yutaka
• Application Number:
  US12/010,287
• Publication Number:
  US 20080176407A1
• Time in Patent Office: Days
• US Class Current: 438/703
• CPC Class Codes: G03F 7/42 Stripping or agents therefor
• CPC Class Codes: H01L 21/31133 by chemical means
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like

Abstract

A semiconductor device manufacturing method includes: a step of implementing etching onto a film formed on a semiconductor wafer; and a removal step of supplying, after etching, a removing solution for removing deposition on the film to a semiconductor wafer in the state where the number of rotations thereof is smaller than a predetermined number of rotations thereafter to rotate the semiconductor wafer at a higher number of rotations, which is greater than the predetermined number of rotations. In this method, the time during which removing solution is supplied is 45 sec. or less. This method includes a sequence in which removal step is executed twice or more.

Claims

1. A method of manufacturing a semiconductor device comprising:

forming a film on a semiconductor wafer;

forming a mask film on the film;

etching the film using the mask; and

cleaning the wafer after etching the film, the cleaning step including a sequence supplying removing solution to the wafer while a removal step having plural operations including rotating the wafer at a first number of rotation and a rotating the wafer at a second number of rotation which is larger than the first number of rotation is performed,

wherein the total time of supplying the removing solution in the cleaning step is 45 seconds or less.

2. The method of manufacturing a semiconductor device according to claim 1,

wherein the sequence is executed twice or more.

3. The method of manufacturing a semiconductor device according to claim 1,

wherein the second number of rotation is set to be from 1000 rpm to 4000 rpm.

4. The method of manufacturing a semiconductor device according to claim 1,

wherein, in first of the operations, the first number of rotation is set to be 0 rpm.

5. The method of manufacturing a semiconductor device according to claim 1,

wherein the first number of rotation is set to be larger than 0 rpm and is 120 rpm or less.

6. The method of manufacturing a semiconductor device according to claim 1,

wherein temperature of the removing solution supplied to the semiconductor wafer is set to be from 35°

C. to 45°

C.

7. The method of manufacturing a semiconductor device according to claim 1,

wherein the sequence includes a rinsing step of supplying, for 10 sec. or more, a rinsing solution for removing the removing solution.

8. The method of manufacturing a semiconductor device according to claim 1,

wherein, in a part of the removal step included in the sequence, supply of the removing solution is stopped.

9. The method of manufacturing a semiconductor device according to claim 8,

wherein removing solution is stopped while rotating the wafer at a second number of rotation.

10. The method of manufacturing a semiconductor device according to claim 1,

wherein the removing solution is including hydrofluoric acid.

11. The method of manufacturing a semiconductor device according to claim 1,

wherein the film is including aluminum.

12. A method of manufacturing a semiconductor device comprising:

forming a film on a semiconductor wafer;

forming a mask film on the film;

etching the film using the mask; and

cleaning the wafer to remove deposition, the cleaning step including a sequence supplying removing solution on the wafer while a removal step having plural operations including rotating the wafer at a first number of rotation and a rotating the wafer at a second number of rotation which is larger than the first number of rotation is performed,

wherein the sequence further including a rinsing step rotating the wafer at a third number of rotation whose number is greater than the first number of rotations and smaller than the second number of rotations.

13. The method of manufacturing a semiconductor device according to claim 12,

wherein the sequence is executed twice or more.

14. A method of manufacturing a semiconductor device, comprising:

performing a selective etching operation on a semiconductor wafer to produce an intermediate semiconductor wafer; and

performing a cleaning operation on the intermediate semiconductor wafer;

the cleaning operation is performed by carrying out a sequence a plurality of times, the sequence comprising a removal step, a rinsing step and a drying step, the removal step including supply of a removing solution to the intermediate semiconductor wafer, the rinsing solution including supply of a rinsing solution to the intermediate semiconductor wafer, the removing solution being thereby supplied to the intermediate semiconductor wafer a plurality of times during the cleaning operation, and a total period of time when the removing solution is being supplied to the intermediate semiconductor wafer during the cleaning operation is 45 seconds or less.

15. The method as claimed in claim 14, wherein the removal step including a first operation, a second operation following the first operation, a third operation following the second operation, and a fourth operation following the third operation, the intermediate semiconductor wafer being rotated at a first speed during the first operation, at a second speed higher than the first speed during the second operation, at a third speed lower than the second speed during the third operation, and at a fourth speed higher than the third speed during the fourth operation.

16. The method as claimed in claim 15, the first speed is zero and the third speed is larger than zero.

17. The method as claimed in claim 15, wherein the intermediate semiconductor wafer is rotated at a fifth speed during the rinsing step, the fifth speed is higher than each of the first and second speeds.

18. The method as claimed in claim 15, wherein the intermediate semiconductor wafer is rotated at a fifth speed during the rinsing step for a predetermined period of time which is longer than each of the first to fourth operations.

19. The method as claimed in claim 14, wherein the sequence is carried out three times, a period of time when the removing solution is being supplied to the intermediate semiconductor wafer is 15 seconds or less per one sequence.

20. The method as claimed in claim 19, wherein the supply of the removing solution to the intermediate semiconductor wafer is suspended and then resumed during the removal step of one sequence.