Atomic layer deposition system including a plurality of exhaust tubes
First Claim
1. An in-line atomic layer deposition (ALD) system for depositing a film by using an ALD process while alternately introducing a plurality of vapor phase reactants, comprising:
- a reaction chamber;
a stage arranged in said reaction chamber for mounting thereon a semiconductor wafer; and
a plurality of exhaust tubes provided in a vicinity of a periphery of said stage, said exhaust tubes capable of being controlled in an exhaust volume thereof independently of one another,wherein each of said exhaust tubes includes therein a control valve for adjusting the exhaust volume, and the open angle of each said control valve is controlled depending on a pressure measured by a first vacuum gauge that is arranged at upstream of each of said control valves to measure a degree of vacuum in each of said exhaust tubes.
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Accused Products
Abstract
An atomic layer deposition system includes a reaction chamber, a plurality of exhaust tubes communicated to the reaction chamber, a plurality of first vacuum gauges for monitoring the degree of vacuum of the respective exhaust tubes, a second vacuum gauge for monitoring the degree of vacuum of the reaction chamber, and control valves for adjusting the exhaust volume of the exhaust tubes independently of one another. The control valves are controlled based on the pressures measured by the first and second control valves for achieving a uniform flow of the vapor phase reactant.
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Citations
19 Claims
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1. An in-line atomic layer deposition (ALD) system for depositing a film by using an ALD process while alternately introducing a plurality of vapor phase reactants, comprising:
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a reaction chamber; a stage arranged in said reaction chamber for mounting thereon a semiconductor wafer; and a plurality of exhaust tubes provided in a vicinity of a periphery of said stage, said exhaust tubes capable of being controlled in an exhaust volume thereof independently of one another, wherein each of said exhaust tubes includes therein a control valve for adjusting the exhaust volume, and the open angle of each said control valve is controlled depending on a pressure measured by a first vacuum gauge that is arranged at upstream of each of said control valves to measure a degree of vacuum in each of said exhaust tubes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for depositing an insulation film by using an in-line atomic layer deposition (ALD) system including a reaction chamber, a stage arranged in said reaction chamber for mounting thereon a semiconductor wafer, and a plurality of exhaust tubes provided on a periphery of said stage, said exhaust tubes each including therein a control valve for adjusting the exhaust volume and a first vacuum gage arranged at upstream of said control valve for measuring a degree of vacuum in a corresponding one of said exhaust tubes, said method comprising the steps of:
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alternately introducing a plurality of vapor phase reactants into said reactor chamber; controlling said exhaust tubes in an exhaust volume thereof independently from one another by using said control valve during evacuation of at least one of the vapor phase reactants; and controlling an open angle of each said control valve depending on a pressure measured by each said first vacuum gauge, to thereby control a direction of flow of said vapor phase reactant in said reaction chamber. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification