NITRIDE/ZINC OXIDE BASED LIGHT-EMITTING DIODES

• US 20080179587A1
• Filed: 04/01/2008
• Published: 07/31/2008
• Est. Priority Date: 11/13/2006
• Status: Active Grant

• Current Assignee: Georgia Tech Research Corporation (University System of Georgia)
• Original Assignee: Georgia Tech Research Corporation (University System of Georgia)
• Inventors: Doolittle, William Alan, Namkoong, Gon
• Granted Patent: US 7,888,669 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/26 Materials of the light emitting region
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al_1-x-yIn_xGa_yN; 0≦x<1, 0<y≦1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al_1-x-yIn_xGa_yN/GaN; 0≦x<1, 0<y≦1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.

Claims

1. A white light-emitting nitride/zinc oxide (ZnO) based compound semiconductor device having a heterostructure comprising:

an active Al_1-x-yIn_xGa_yN light-emitting layer;

0≦

x<

1, 0<

y≦

1, and x+y=0.1 to 1;

an n-type ZnO substrate; and

a cladding layer of p-type GaN,

said active light-emitting layer situated or formed directly or indirectly on or in contact with said n-type ZnO substrate, and the cladding layer of p-type GaN situated or formed directly or indirectly on or in contact with the active light-emitting layer,

said compound semiconductor device doped with an impurity.

2. The device according to claim 1, wherein said compound semiconductor of said cladding layer is of p-type, doped with a p-type impurity.

3. The device according to claim 2, wherein said p-type impurity comprises a Group II or Group IV element.

4. The device according to claim 1, wherein said compound semiconductor of said active light-emitting layer is of n-type, doped with at least an n-conductivity type impurity.

5. The device according to claim 1, wherein said impurity doped in said compound semiconductor of said active light-emitting layer comprises a p-type impurity including a Group II or/and Group IV element and an n-type impurity including a Group IV element.

6. The device according to claim 1, wherein said compound semiconductor of said light-emitting layer is of n-type, doped with n-type impurity.

7. The device according to claim 6, wherein said n-type impurity comprises one or more group III elements.

8. The device according to claim 1, wherein said compound semiconductor or active light-emitting layer is represented by the formula Al_1-x-yIn_xGa_yN;

0≦

x<

1, 0<

y≦

1, and x+y=0.1 to 1.

9. The device according to claim 1, wherein said light-emitting layer has a thickness of 10×

10<sup>−

10</sup> m to 0.5×

10<sup>−

6</sup> m.

10. The device according to claim 1, wherein said double-heterostructure has an n-type ZnO contact layer joined to said first active light-emitting layer, and a p-type GaN contact layer joined to said active light-emitting layer.

11. A light-emitting heterojunction nitride/zinc oxide-based compound semiconductor device having a heterostructure comprising:

a light-emitting layer formed of a low-resistivity Al_1-x-yIn_xGa_yN;

0≦

x<

1, 0<

y≦

1, and x+y=0.1 to 1 compound semiconductor doped with a n-type impurity;

an active light-emitting layer joined to an n-type zinc oxide-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and

a cladding layer joined to said active light-emitting layer and formed of a low-resistivity, p-type GaN-based compound semiconductor.

12. The device according to claim 11, wherein said p-type impurity doped in said compound semiconductor of said light-emitting layer comprises at least one element selected from the group consisting of magnesium, zinc, beryllium and carbon, and combinations thereof.

13. The device according to claim 11, wherein said compound semiconductor of said active light-emitting layer is represented by a formula:

Al_1-x-yIn_xGa_yN;

0≦

x<

1, 0<

y≦

1, and x+y=0.1 to 1.

14. The device according to claim 11, wherein said compound semiconductor of said p-type cladding layer is represented by a formula:

Al_1-l-mIn₁Ga_mN;

0≦

1<

1, 0<

m≦

1, and 1+m=0.1 to 1.

15. The device according to claim 11, wherein said light-emitting layer has a thickness of 10×

10<sup>−

10</sup> m to 0.5×

10<sup>−

6</sup> m.

16. The device according to claim 11, wherein said p-type impurity doped in said compound semiconductor of said light-emitting layer comprises magnesium, and a concentration of the magnesium is 1×

10¹⁷ to 1×

10²¹/cm³.

17. The device according to claim 11, wherein said cladding layer has a thickness of 0.05×

10<sup>−

6</sup> m to 1.5×

10<sup>−

6</sup> m.

18. The device according to claim 11, wherein said heterostructure has an n-type ZnO contact layer, and a p-type GaN contact layer joined to said active light-emitting layer.