SEMICONDUCTOR LIGHT EMITTING ELEMENT
First Claim
1. A semiconductor light emitting element comprising:
- an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0°
to 45°
in inclination angle into a <
1-100>
direction, and which is in a range of 0°
to 10°
in inclination angle into a <
11-20>
direction;
an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate;
an n-type guide layer formed of a III-V semiconductor above the n-type layer;
an active layer formed of a III-V semiconductor above the n-type guide layer;
a p-type first guide layer formed of a III-V semiconductor above the active layer;
a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and
a concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer, the concavo-convex layer having concave portions and convex portions which are alternately and regularly arranged at a top face thereof and having lower p-type impurity concentration than that of the p-type contact layer.
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Accused Products
Abstract
A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a <1-100> direction, and which is in a range of 0° to 10° in inclination angle into a <11-20> direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.
30 Citations
14 Claims
-
1. A semiconductor light emitting element comprising:
-
an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0°
to 45°
in inclination angle into a <
1-100>
direction, and which is in a range of 0°
to 10°
in inclination angle into a <
11-20>
direction;an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and a concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer, the concavo-convex layer having concave portions and convex portions which are alternately and regularly arranged at a top face thereof and having lower p-type impurity concentration than that of the p-type contact layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
Specification