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Closed trench MOSFET with floating trench rings as termination

  • US 20080179662A1
  • Filed: 01/28/2007
  • Published: 07/31/2008
  • Est. Priority Date: 01/28/2007
  • Status: Active Grant
First Claim
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1. A semiconductor power device comprising:

  • a plurality of closed power transistor cells disposed in an active cell area on a semiconductor substrate wherein each of said transistor cells is surrounded by trenched gates constituting substantially a square or rectangular cell; and

    said trenched gates further extended to a gate contact area and having greater width as wider trenched gates for electrically contacting a gate pad wherein said semiconductor power device further comprising a source region disposed only in regions near said trenched gates in said closed power transistor cells and away from regions near said wider trenched gate whereby a device ruggedness is improved.

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