COMPONENT ARRANGEMENT INCLUDING A MOS TRANSISTOR HAVING A FIELD ELECTRODE
First Claim
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1. A component arrangement comprising:
- a MOS transistor having a gate electrode;
a drift zone;
a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer; and
a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.
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Abstract
A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.
21 Citations
20 Claims
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1. A component arrangement comprising:
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a MOS transistor having a gate electrode; a drift zone; a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer; and a charging circuit, having a rectifier element connected between the gate electrode and the field electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An integrated circuit comprising:
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a semiconductor body; a MOS transistor having a gate electrode; a drift zone; a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer; a charging circuit, having a rectifier element connected between the gate electrode and the field electrode; and one or more additional electrical components. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification