Critical dimension control for photolithography for microelectromechanical systems devices
First Claim
1. A method of making a microelectromechanical system (MEMS) device, the method comprising:
- forming a stationary layer;
forming a moving layer spaced from the stationary layer; and
forming at least one support structure configured to support the moving layer, wherein forming the at least one support structure comprises;
forming a photoresist layer over the stationary layer; and
patterning the photoresist layer, wherein patterning the photoresist layer comprises;
exposing the photoresist layer to light through a photomask;
first developing the photoresist layer with a first developing solution for a first predetermined period of time after exposing;
removing the first developing solution after first developing;
developing the photoresist layer a second time with a second developing solution for a second predetermined period of time after removing the first developing solution; and
removing the second developing solution after developing the photoresist layer the second time.
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Abstract
A method of making a microelectromechanical system (MEMS) device is disclosed. The method includes forming a stationary layer and a moving layer spaced from the stationary layer. The method also includes forming at least one support structure configured to support the moving layer. Forming the at least one support structure includes forming a photoresist layer over the stationary layer and patterning the photoresist layer. Patterning the photoresist layer includes exposing the photoresist layer to light through a photomask. Then, the photoresist layer is first developed with a first developing solution for a first predetermined period of time after exposing. The first developing solution is removed after first developing. Subsequently, the photoresist layer is developed a second time with a second developing solution for a second predetermined period of time after removing the first developing solution. The second developing solution is removed after the second developing process.
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Citations
28 Claims
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1. A method of making a microelectromechanical system (MEMS) device, the method comprising:
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forming a stationary layer; forming a moving layer spaced from the stationary layer; and forming at least one support structure configured to support the moving layer, wherein forming the at least one support structure comprises; forming a photoresist layer over the stationary layer; and patterning the photoresist layer, wherein patterning the photoresist layer comprises; exposing the photoresist layer to light through a photomask; first developing the photoresist layer with a first developing solution for a first predetermined period of time after exposing; removing the first developing solution after first developing; developing the photoresist layer a second time with a second developing solution for a second predetermined period of time after removing the first developing solution; and removing the second developing solution after developing the photoresist layer the second time. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A microelectromechanical system (MEMS) comprising an array of MEMS devices, each of the devices comprising:
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a stationary layer; a moving layer overlying the stationary layer with a cavity therebetween, the moving layer being movable in the cavity between a first position and a second position, the first position being a first distance from the stationary layer, the second position being a second distance from the stationary layer, the second distance being greater than the first distance; and a support structure configured to support the moving layer, wherein each of the support structures across the array has a lateral dimension having a standard deviation ranging from about ±
0.01 μ
m to about ±
0.45 μ
m. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification