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Critical dimension control for photolithography for microelectromechanical systems devices

  • US 20080180783A1
  • Filed: 01/25/2007
  • Published: 07/31/2008
  • Est. Priority Date: 01/25/2007
  • Status: Abandoned Application
First Claim
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1. A method of making a microelectromechanical system (MEMS) device, the method comprising:

  • forming a stationary layer;

    forming a moving layer spaced from the stationary layer; and

    forming at least one support structure configured to support the moving layer, wherein forming the at least one support structure comprises;

    forming a photoresist layer over the stationary layer; and

    patterning the photoresist layer, wherein patterning the photoresist layer comprises;

    exposing the photoresist layer to light through a photomask;

    first developing the photoresist layer with a first developing solution for a first predetermined period of time after exposing;

    removing the first developing solution after first developing;

    developing the photoresist layer a second time with a second developing solution for a second predetermined period of time after removing the first developing solution; and

    removing the second developing solution after developing the photoresist layer the second time.

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