Magnetic thin film and magnetoresistance effect element
First Claim
Patent Images
1. A magnetic thin film,comprising:
- an antiferromagnetic layer; and
a ferromagnetic layer,wherein said antiferromagnetic layer is composed of a manganic antiferromagnetic material, anda manganese (Mn) layer is formed between said antiferromagnetic layer and said ferromagnetic layer.
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Abstract
In the magnetic thin film, a magnetization direction of a ferromagnetic layer, e.g., a pinned layer, can be securely fixed. The magnetic thin film comprises: an antiferromagnetic layer; and the ferromagnetic layer. The antiferromagnetic layer is composed of a manganic antiferromagnetic material, and a manganese (Mn) layer is formed between the antiferromagnetic layer and the ferromagnetic layer.
20 Citations
10 Claims
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1. A magnetic thin film,
comprising: -
an antiferromagnetic layer; and a ferromagnetic layer, wherein said antiferromagnetic layer is composed of a manganic antiferromagnetic material, and a manganese (Mn) layer is formed between said antiferromagnetic layer and said ferromagnetic layer. - View Dependent Claims (2)
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3. A magnetoresistance effect element,
comprising: -
a lower shielding layer; an upper shielding layer; and a magnetoresistance effect film being sandwiched between said lower and upper shielding layers, said magnetoresistance effect film including a pinned layer and a free layer, wherein an antiferromagnetic layer composed of a manganic antiferromagnetic material is provided under the pinned layer, and a manganese (Mn) layer is provided between the pinned layer and the antiferromagnetic layer. - View Dependent Claims (4, 5, 6)
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7. A magnetic head,
comprising: -
a read-head; and a write-head, wherein said read-head has a magnetoresistance effect element, which comprises;
a lower shielding layer;
an upper shielding layer; and
a magnetoresistance effect film being sandwiched between the lower and upper shielding layers, the magnetoresistance effect film including a pinned layer and a free layer,an antiferromagnetic layer composed of a manganic antiferromagnetic material is provided under the pinned layer, and a manganese (Mn) layer is provided between the pinned layer and the antiferromagnetic layer. - View Dependent Claims (8, 9, 10)
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Specification