Electronic and optical circuit integration through wafer bonding

• US 20080181558A1
• Filed: 01/31/2007
• Published: 07/31/2008
• Est. Priority Date: 01/31/2007
• Status: Abandoned Application

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Williams, R. Stanley, Stewart, Duncan, Hartwell, Peter G., Beausoleil, Raymond
• Application Number:
  US11/701,314
• Publication Number:
  US 20080181558A1
• Time in Patent Office: Days
• US Class Current: 385/14
• CPC Class Codes: G02B 6/4201 Packages, e.g. shape, construction, internal or external details
• CPC Class Codes: G02B 6/43 Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
• CPC Class Codes: H01S 5/02 Structural details or components not essential to laser action

Abstract

One embodiment in accordance with the invention is an apparatus that can include an optical circuit wafer and an integrated circuit wafer. The optical circuit wafer and the integrated circuit wafer are bonded together by a wafer bonding process.

Claims

1. An apparatus comprising:

an optical circuit wafer; and

an integrated circuit wafer, wherein said optical circuit wafer and said integrated circuit wafer are bonded together by a wafer bonding process.

2. The apparatus of claim 1, wherein said wafer bonding process is selected from the group consisting of eutectic bonding, compression bonding, fusion bonding, anodic bonding, plasma assisted bonding, and adhesive bonding.

3. The apparatus of claim 1, wherein a side of said integrated circuit wafer projects beyond said optical circuit wafer and comprises a bond pad configured for receiving an electrical coupling.

4. The apparatus of claim 1, wherein said wafer bonding process comprises an electrical interconnect between said optical circuit wafer and said integrated circuit wafer.

5. The apparatus of claim 4, wherein said electrical interconnect enables the integrated circuit wafer and the optical circuit wafer to exchange electrical signals.

6. The apparatus of claim 1, wherein said optical circuit wafer includes one or more elements selected from the group consisting of a photodetector, an electronic optical modulator, an optical waveguide, a laser, and electrical circuitry.

7. The apparatus of claim 1, wherein said integrated circuit wafer comprises a gap setting material for maintaining a distance between said optical circuit wafer and said integrated circuit wafer during said wafer bonding process.

8. The apparatus of claim 1, wherein a side of said apparatus is configured for receiving an external optical coupling to couple an optical signal to said optical circuit wafer.

9. The apparatus of claim 8, wherein said external optical coupling comprises a fiber-optic connector.

10. The apparatus of claim 1, wherein a surface of said optical wafer is configured for receiving an external optical coupling to couple an optical signal to said optical circuit wafer.

11. The apparatus of claim 1, wherein said integrated circuit wafer includes an element selected from the group consisting of an active circuit element, a passive circuit element, a memory element, and a programmable circuit element.

12. A method comprising:

utilizing a wafer bonding process to couple an optical circuit wafer and an integrated circuit wafer.

13. The method of claim 12, wherein said wafer bonding process is selected from the group consisting of eutectic bonding, compression bonding, fusion bonding, anodic bonding, plasma assisted bonding, and adhesive bonding.

14. The method of claim 12, wherein said wafer bonding process comprises a bond that is an electrical interconnect between said optical circuit wafer and said integrated circuit wafer.

15. The method of claim 12, wherein a side of said integrated circuit wafer projects beyond said optical circuit wafer and comprises an electrical bond pad for receiving an electrical coupling external to said integrated circuit wafer and said optical circuit wafer.

16. A method comprising:

preparing an optical circuit wafer for a wafer bonding process;

preparing an integrated circuit wafer for said wafer bonding process; and

utilizing said wafer bonding process to couple said optical circuit wafer and said integrated circuit wafer.

17. The method of claim 16, wherein said wafer bonding process comprises a bond that couples said optical circuit wafer and said integrated circuit wafer, said bond further comprises an electrical interconnect between said optical circuit wafer and said integrated circuit wafer.

18. The method of claim 16, wherein said preparing said optical circuit wafer comprises:

depositing a thin film of material above said optical circuit wafer.

19. The method of claim 16, wherein said preparing said integrated circuit wafer comprises:

depositing a thin film of metal above said integrated circuit wafer.

20. The method of claim 16, wherein said integrated circuit wafer comprises a gap setting material for maintaining a distance between said optical circuit wafer and said integrated circuit wafer during said wafer bonding process.