Method for manufacturing display device

• US 20080182349A1
• Filed: 07/26/2007
• Published: 07/31/2008
• Est. Priority Date: 07/28/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kawamata, Ikuko, Shoji, Hironobu, Tanaka, Koichiro, Yamazaki, Shunpei
• Granted Patent: US 8,183,067 B2
• Time in Patent Office: Days
• US Class Current: 438/29
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate

Abstract

A display device which can be manufactured with improved material use efficiency and through a simplified manufacturing process, and a manufacturing technique thereof. A light-absorbing layer is formed, an insulating layer is formed over the light-absorbing layer, the light-absorbing layer and the insulating layer are selectively irradiated with laser light to remove an irradiated region of the insulating layer so that a first opening is formed in the insulating layer, and the light-absorbing layer is selectively removed by using the insulating layer having the first opening as a mask so that a second opening is formed in the insulating layer and the light-absorbing layer. A conductive film is formed in the second opening to be in contact with the light-absorbing layer, thereby electrically connecting to the light-absorbing layer with the insulating layer interposed therebetween.

Claims

1. A method for manufacturing a display device, comprising the steps of:

forming a light-absorbing layer;

forming an insulating layer over the light-absorbing layer;

selectively irradiating the light-absorbing layer and the insulating layer with laser light to remove an irradiated region of the insulating layer and form a first opening in the insulating layer;

selectively removing the light-absorbing layer by using the insulating layer having the first opening as a mask and forming a second opening in the insulating layer and the light-absorbing layer; and

forming a conductive layer in the second opening, the conductive layer being in contact with the light-absorbing layer.

9. The display device according to claim 1, wherein the light-absorbing layer comprises a conductive material.

16. A method for manufacturing the display device according to claim 1, wherein the light-absorbing layer comprises at least one selected from the group consisting of chromium, tantalum, silver, molybdenum, nickel, titanium, cobalt, copper, and aluminum.

23. The display device according to claim 1, wherein the light-absorbing layer comprises a semiconductor material.

30. A method for manufacturing the display device according to claim 1, wherein the light-absorbing layer comprises silicon.

37. The method for manufacturing the display device according to claim 1, wherein the insulating layer transmits the laser light.

2. A method for manufacturing a display device, comprising the steps of:

forming a first conductive layer;

forming a light-absorbing layer over the first conductive layer;

forming an insulating layer over the light-absorbing layer;

selectively irradiating the light-absorbing layer and the insulating layer with laser light to remove an irradiated region of the insulating layer and form a first opening in the insulating layer;

selectively removing the light-absorbing layer by using the insulating layer having the first opening as a mask and forming a second opening in the insulating layer and the light-absorbing layer, the second opening-reaching the conductive layer; and

forming a second conductive layer in the second opening, the second conductive layer being in contact with the light-absorbing layer and the first conductive layer.

10. The display device according to claim 2, wherein the light-absorbing layer comprises a conductive material.

17. A method for manufacturing the display device according to claim 2, wherein the light-absorbing layer comprises at least one selected from the group consisting of chromium, tantalum, silver, molybdenum, nickel, titanium, cobalt, copper, and aluminum.

24. The display device according to claim 2, wherein the light-absorbing layer comprises a semiconductor material.

31. A method for manufacturing the display device according to claim 2, wherein the light-absorbing layer comprises silicon.

38. The method for manufacturing the display device according to claim 2, wherein the insulating layer transmits the laser light.

3. A method for manufacturing a display device, comprising the steps of:

forming a first conductive layer;

forming a light-absorbing layer over the first conductive layer;

forming an insulating layer over the light-absorbing layer;

selectively irradiating the light-absorbing layer and the insulating layer with laser light to remove an irradiated region of the insulating layer and form a first opening in the insulating layer;

selectively removing the light-absorbing layer and the first conductive layer by using the insulating layer having the first opening as a mask and forming a second opening in the insulating layer, the light-absorbing layer, and the first conductive layer; and

forming a second conductive layer in the second opening, the second conductive layer being in contact with the light-absorbing layer and the first conductive layer.

11. The display device according to claim 3, wherein the light-absorbing layer comprises a conductive material.

18. A method for manufacturing the display device according to claim 3, wherein the light-absorbing layer comprises at least one selected from the group consisting of chromium, tantalum, silver, molybdenum, nickel, titanium, cobalt, copper, and aluminum.

25. The display device according to claim 3, wherein the light-absorbing layer comprises a semiconductor material.

32. A method for manufacturing the display device according to claim 3, wherein the light-absorbing layer comprises silicon.

39. The method for manufacturing the display device according to claim 3, wherein the insulating layer transmits the laser light.

4. A method for manufacturing a display device, comprising the steps of:

forming a light-absorbing layer;

forming an insulating layer over the light-absorbing layer;

selectively irradiating the light-absorbing layer and the insulating layer with laser light to remove a portion of an irradiated region of the light-absorbing layer and an irradiated region of the insulating layer and form a first opening in the light-absorbing layer and the insulating layer;

selectively removing the light-absorbing layer by using the insulating layer having the first opening as a mask and forming a second opening in the insulating layer and the light-absorbing layer; and

forming a conductive layer in the second opening, the conductive layer being in contact with the light-absorbing layer.

12. The display device according to claim 4, wherein the light-absorbing layer comprises a conductive material.

19. A method for manufacturing the display device according to claim 4, wherein the light-absorbing layer comprises at least one selected from the group consisting of chromium, tantalum, silver, molybdenum, nickel, titanium, cobalt, copper, and aluminum.

26. The display device according to claim 4, wherein the light-absorbing layer comprises a semiconductor material.

33. A method for manufacturing the display device according to claim 4, wherein the light-absorbing layer comprises silicon.

40. The method for manufacturing the display device according to claim 4, wherein the insulating layer transmits the laser light.

5. A method for manufacturing a display device, comprising the steps of:

forming a first conductive layer;

forming a light-absorbing layer over the first conductive layer;

forming an insulating layer over the light-absorbing layer;

selectively irradiating the light-absorbing layer and the insulating layer with laser light to remove a portion of an irradiated region of the light-absorbing layer and an irradiated region of the insulating layer and form a first opening in the light-absorbing layer and the insulating layer;

selectively removing the light-absorbing layer by using the insulating layer having the first opening as a mask and forming a second opening in the insulating layer and the light-absorbing layer, the second opening reaching the conductive layer; and

forming a second conductive layer in the second opening, the second conductive layer being in contact with the light-absorbing layer and the first conductive layer.

13. The display device according to claim 5, wherein the light-absorbing layer comprises a conductive material.

20. A method for manufacturing the display device according to claim 5, wherein the light-absorbing layer comprises at least one selected from the group consisting of chromium, tantalum, silver, molybdenum, nickel, titanium, cobalt, copper, and aluminum.

27. The display device according to claim 5, wherein the light-absorbing layer comprises a semiconductor material.

34. A method for manufacturing the display device according to claim 5, wherein the light-absorbing layer comprises silicon.

41. The method for manufacturing the display device according to claim 5, wherein the insulating layer transmits the laser light.

6. A method for manufacturing a display device, comprising the steps of:

forming a first conductive layer;

forming a light-absorbing layer over the first conductive layer;

forming an insulating layer over the light-absorbing layer;

selectively irradiating the light-absorbing layer and the insulating layer with laser light to remove a portion of an irradiated region of the light-absorbing layer and an irradiated region of the insulating layer and form a first opening in the light-absorbing layer and the insulating layer;

selectively removing the light-absorbing layer and the first conductive layer by using the insulating layer having the first opening as a mask and forming a second opening in the insulating layer, the light-absorbing layer, and the first conductive layer; and

forming a second conductive layer in the second opening, the second conductive layer being in contact with the light-absorbing layer and the first conductive layer.

14. The display device according to claim 6, wherein the light-absorbing layer comprises a conductive material.

21. A method for manufacturing the display device according to claim 6, wherein the light-absorbing layer comprises at least one selected from the group consisting of chromium, tantalum, silver, molybdenum, nickel, titanium, cobalt, copper, and aluminum.

28. The display device according to claim 6, wherein the light-absorbing layer comprises a semiconductor material.

35. A method for manufacturing the display device according to claim 6, wherein the light-absorbing layer comprises silicon.

42. The method for manufacturing the display device according to claim 6, wherein the insulating layer transmits the laser light.

7. A method for manufacturing a display device, comprising the steps of:

forming a first conductive layer;

forming a light-absorbing layer over the first conductive layer;

forming an insulating layer over the light-absorbing layer;

selectively irradiating the light-absorbing layer and the insulating layer with laser light to remove an irradiated region of the light-absorbing layer and an irradiated region of the insulating layer and form a first opening in the light-absorbing layer and the insulating layer;

selectively removing the first conductive layer by using the light-absorbing layer and the insulating layer having the first opening as a mask and forming a second opening in the insulating layer, the light-absorbing layer, and the first conductive layer; and

forming a second conductive film in the second opening, the second conductive layer being in contact with the light-absorbing layer and the second conductive layer.

8. The method for manufacturing the display device, according to claim 7, wherein a portion of the first conductive layer is also removed when the light-absorbing layer and the insulating layer are irradiated.

15. The display device according to claim 7, wherein the light-absorbing layer comprises a conductive material.

22. A method for manufacturing the display device according to claim 7, wherein the light-absorbing layer comprises at least one selected from the group consisting of chromium, tantalum, silver, molybdenum, nickel, titanium, cobalt, copper, and aluminum.

29. The display device according to claim 7, wherein the light-absorbing layer comprises a semiconductor material.

36. A method for manufacturing the display device according to claim 7, wherein the light-absorbing layer comprises silicon.

43. The method for manufacturing the display device according to claim 7, wherein the insulating layer transmits the laser light.