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MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING STI TECHNIQUE

  • US 20080182381A1
  • Filed: 10/18/2007
  • Published: 07/31/2008
  • Est. Priority Date: 10/20/2006
  • Status: Abandoned Application
First Claim
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1. A manufacturing method of a semiconductor device comprising:

  • forming a first isolation trench and a second isolation trench having width wider than the first isolation trench in a main surface area of a semiconductor substrate,forming a first insulating film on the main surface area of the semiconductor substrate and in the first and second isolation trenches and narrowing width of an opening portion of the first isolation trench,forming a second insulating film on the first insulating film by use of a high-density plasma-CVD method, forming a void in the first isolation trench while covering the opening portion of the first isolation trench and filling the second isolation trench with the second insulating film,removing part of the second insulating film which covers the opening portion by anisotropic etching, andfilling the void with an insulating film having fluidity at a film formation time.

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