MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING STI TECHNIQUE
First Claim
1. A manufacturing method of a semiconductor device comprising:
- forming a first isolation trench and a second isolation trench having width wider than the first isolation trench in a main surface area of a semiconductor substrate,forming a first insulating film on the main surface area of the semiconductor substrate and in the first and second isolation trenches and narrowing width of an opening portion of the first isolation trench,forming a second insulating film on the first insulating film by use of a high-density plasma-CVD method, forming a void in the first isolation trench while covering the opening portion of the first isolation trench and filling the second isolation trench with the second insulating film,removing part of the second insulating film which covers the opening portion by anisotropic etching, andfilling the void with an insulating film having fluidity at a film formation time.
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Accused Products
Abstract
A first trench and a second trench having width wider than the first trench are simultaneously formed in a main surface area of a semiconductor substrate. The width of an opening portion of the first trench is made narrower by forming a first insulating film on the main surface of the semiconductor substrate and in the first and second trenches. A second insulating film is formed on the first insulating film by use of a high-density plasma-CVD method to form a void in the first trench while covering the opening portion of the first trench, and the second trench is filled with the second insulating film. Then, part of the second insulating film which covers the opening portion is removed by anisotropic etching and the void is filled with an insulating film having fluidity at the film formation time.
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Citations
18 Claims
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1. A manufacturing method of a semiconductor device comprising:
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forming a first isolation trench and a second isolation trench having width wider than the first isolation trench in a main surface area of a semiconductor substrate, forming a first insulating film on the main surface area of the semiconductor substrate and in the first and second isolation trenches and narrowing width of an opening portion of the first isolation trench, forming a second insulating film on the first insulating film by use of a high-density plasma-CVD method, forming a void in the first isolation trench while covering the opening portion of the first isolation trench and filling the second isolation trench with the second insulating film, removing part of the second insulating film which covers the opening portion by anisotropic etching, and filling the void with an insulating film having fluidity at a film formation time. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 15, 16)
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10. A manufacturing method of a semiconductor device comprising:
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forming a first isolation trench in a main surface area of a semiconductor substrate, forming a first insulating film on the main surface area of the semiconductor substrate and in the first isolation trench, filling the first isolation trench with an insulating film having fluidity at a film formation time via the first insulating film by forming an insulating film having fluidity at the film formation time on the first insulating film, forming a second isolation trench having width wider than the first isolation trench, and filling the second isolation trench with a second insulating film by means of a high-density plasma-CVD method. - View Dependent Claims (11, 12, 13, 14, 17, 18)
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Specification