METHODS OF FILLING A SET OF INTERSTITIAL SPACES OF A NANOPARTICLE THIN FILM WITH A DIELECTRIC MATERIAL

• US 20080182390A1
• Filed: 12/04/2007
• Published: 07/31/2008
• Est. Priority Date: 12/07/2006
• Status: Active Grant

• Current Assignee: Solar Paste LLC
• Original Assignee: Innovalight, Inc. (Corteva, Inc.)
• Inventors: Kelman, Maxim, Antoniadis, Homer, Jurbergs, David, Rogojina, Elena V., Lemmi, Francesco, Yu, Pingrong
• Granted Patent: US 7,776,724 B2
• Time in Patent Office: Days
• US Class Current: 438/478
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02524 Group 14 semiconducting materials
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02601 Nanoparticles fullerenes H10K85/211
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: Y10S 977/892 Liquid phase deposition
• CPC Class Codes: Y10S 977/893 Deposition in pores, molding, with subsequent removal of mold

Abstract

A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10⁻⁷ Torr and about 1×10⁻⁴ Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.

Claims

1. A method of forming a densified nanopartiele thin film, comprising:

positioning a substrate in a first chamber;

depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent;

heating the nanoparticle ink to a first temperature between about 30°

C. and about 300°

C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed;

positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×

10<sup>−

7</sup> Torr and about 1×

10<sup>−

4</sup> Torr;

depositing on the porous compact a dielectric material;

wherein the densified nanoparticle thin film is formed.

2. The method of claim 1, wherein the dielectric material is one of a nitride material, an oxide material, and a carbide material

3. The method of claim 1, wherein the set of Group IV semiconductor particles is one of n-doped semiconductor particles, p-doped semiconductor particles, and intrinsic semiconductor particles.

4. The method of claim 1, wherein the substrate is one of silicon, quartz, soda lime, and borosilicate glasses.

5. The method of claim 1, further including the step of positioning the substrate in a third chamber, after the step of depositing a dielectric material.

6. The method of claim 5, further including the step of substantially removing a residual top layer of the dielectric material using one of a chemical mechanical process, a reactive ion etch process, and a reverse sputtering process, after the step of positioning the substrate in a third chamber.

7. The method of claim 6, further including the step of depositing a conductive material on the porous compact in order to form an electrode, after the step of substantially removing a residual top layer of the dielectric material.

8. The method of claim 7, wherein the conductive material comprises at least one of aluminum, silver, molybdenum, chromium, titanium, nickel, and platinum.

9. The method of claim 5, further including the step of depositing a metal paste on a residual top layer of the dielectric material, after the step of positioning the substrate in a third chamber.

10. The method of claim 9, further including the step of heating the metal paste such that the metal paste penetrates the residual top layer causing an electrode to form on the densified nanoparticle thin film, after the step of depositing a metal paste on a residual top layer of the dielectric material.

11. A method of forming a densified nanoparticle thin film in a chamber, comprising:

positioning a substrate;

depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent;

densifying the nanoparticle ink into a porous compact, wherein the solvent is removed;

spin coating a spin-on-glass material on the porous compact from about 3000 rpm to about 4000 rpm;

heating the spin-on-glass material to a first temperature between about 80°

C. and about 250°

C., and for a first time period between about 1 minute to about 30 minutes;

heating the spin-on-glass material to a second temperature between about 400°

C. and about 600°

C., and for a second time period between about 30 minute to about 1 hour;

wherein the densified nanoparticle thin film is formed.

12. The method of claim 11, wherein the set of Group IV semiconductor particles is one of n-doped semiconductor particles, p-doped semiconductor particles, and intrinsic semiconductor particles.

13. The method of claim 11, wherein the substrate is one of silicon, quartz, soda lime, and borosilicate glasses.

14. The method of claim 11, further including the step of depositing a conductive material on the porous compact in order to form an electrode, after the step of substantially removing a residual top layer of the dielectric material.

15. The method of claim 14, wherein the conductive material comprises at least one of aluminum, silver, molybdenum, chromium, titanium, nickel, and platinum.

16. The method of claim 11, further including the step of depositing a metal paste on a residual top layer of the dielectric material, after the step of positioning the substrate in a third chamber.

17. The method of claim 16, further including the step of heating the metal paste such that the metal paste penetrates the residual top layer causing an electrode to form on the densified nanoparticle thin film, after the step of depositing a metal paste on a residual top layer of the dielectric material.

18. A method of forming a densified nanoparticle thin film in a chamber, comprising:

positioning a substrate;

depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent;

densifying the nanoparticle ink into a porous compact, wherein the solvent is removed;

depositing a hydrocarbon species on the porous compact, wherein the hydrocarbon species includes one of a terminal alkene group or a terminal alkyne group;

heating the hydrocarbon species to a first temperature between about 150°

C. and about 300°

C., at a pressure of between about 1 Torr and about an atmosphere;

wherein the densified nanoparticle thin film is formed.

19. The method of claim 18, wherein the set of Group IV semiconductor particles is one of n-doped semiconductor particles, p-doped semiconductor particles, and intrinsic semiconductor particles.

20. The method of claim 18, wherein the substrate is one of silicon, quartz, soda lime, and borosilicate glasses.

21. The method of claim 18, wherein the hydrocarbon species is one of ethylene, acetylene, butane, and hexyne.

22. The method of claim 18, further including the step of depositing a conductive material on the porous compact in order to form an electrode, after the step of substantially removing a residual top layer of the dielectric material.

23. The method of claim 22, wherein the conductive material comprises at least one of aluminum, silver, molybdenum, chromium, titanium, nickel, and platinum.

24. The method of claim 18, further including the step of depositing a metal paste on a residual top layer of the dielectric material, after the step of positioning the substrate in a third chamber.

25. The method of claim 24, further including the step of heating the metal paste such that the metal paste penetrates the residual top layer causing an electrode to form on the densified nanoparticle thin film, after the step of depositing a metal paste on a residual top layer of the dielectric material.