METHOD OF FORMING A METAL LAYER OVER A PATTERNED DIELECTRIC BY ELECTROLESS DEPOSITION USING A SELECTIVELY PROVIDED ACTIVATION LAYER
First Claim
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1. A method, comprising:
- providing an exposed surface of an activation layer selectively at a bottom of an opening formed in a material layer of a semiconductor device, said activation layer comprising a species for initiating an electrochemical deposition process when being in contact with a specified electrolyte solution; and
applying said specified electrolyte solution in said opening to perform an electrochemical process for filling said opening with a conductive material from bottom to top on the basis of said exposed surface of the activation layer.
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Abstract
By forming an activation/nucleation layer selectively at a bottom of an opening, efficient electroless deposition techniques may be used for forming contacts, vias and trenches of advanced semiconductor devices. By selectively providing the activation material, a self-aligned bottom-to-top fill behavior may be obtained.
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Citations
20 Claims
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1. A method, comprising:
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providing an exposed surface of an activation layer selectively at a bottom of an opening formed in a material layer of a semiconductor device, said activation layer comprising a species for initiating an electrochemical deposition process when being in contact with a specified electrolyte solution; and applying said specified electrolyte solution in said opening to perform an electrochemical process for filling said opening with a conductive material from bottom to top on the basis of said exposed surface of the activation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method comprising:
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forming an opening in a material layer of a semiconductor device; providing an exposed catalyst material selectively at a bottom of said opening, said catalyst material initiating an electrochemical reaction upon contact with a specified electrolyte solution; and filling said opening from bottom to top with a metal-containing material by applying said specified electrolyte solution. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A method, comprising:
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forming an activation layer on a restricted area of a semiconductor device; forming a dielectric layer above said restricted area; forming an opening in said dielectric layer to expose a portion of said activation layer; and filling said opening by an electrochemical deposition process using said exposed portion of the activation layer for initiating said electrochemical deposition process. - View Dependent Claims (19, 20)
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Specification