PLASMA-ENHANCED ALD OF TANTALUM NITRIDE FILMS

• US 20080182411A1
• Filed: 01/26/2007
• Published: 07/31/2008
• Est. Priority Date: 01/26/2007
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM America Incorporated (ASM International NV)
• Inventors: Elers, Kai-Erik
• Granted Patent: US 7,598,170 B2
• Time in Patent Office: Days
• US Class Current: 438/685
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/4554 Plasma being used non-continuously in between ALD reactions C23C16/56 takes precedence

Abstract

Methods of controllably producing conductive tantalum nitride films are provided. The methods comprise contacting a substrate in a reaction space with alternating and sequential pulses of a tantalum source material, plasma-excited species of hydrogen and nitrogen source material. The plasma-excited species of hydrogen reduce the oxidation state of tantalum, thereby forming a substantially conductive tantalum nitride film over the substrate. In some embodiments, the plasma-excited species of hydrogen react with and removes halide residues in a deposited metallic film.

Claims

1. -15. (canceled)

18. (canceled)

19. (canceled)

30. An atomic layer deposition (ALD) process for growing a tantalum nitride film over a substrate in a reaction space, comprising the sequential steps of:

a) feeding a vapor-phase pulse of a tantalum source chemical into the reaction space;

b) removing excess tantalum source chemical and any reaction by-products from the reaction space;

c) feeding a vapor-phase pulse of a nitrogen source chemical into the reaction space;

d) removing excess nitrogen source chemical and any reaction by-products from the reaction space;

e) feeding a vapor-phase pulse of plasma-excited species of hydrogen (H₂) into the reaction space; and

f) removing excess plasma-excited species of hydrogen and any reaction by-products from the reaction space.

16. The process of claim 30, wherein removing comprises evacuating with the aid of a purge gas.

17. The process of claim 30, wherein removing comprises evacuating with a pumping system.

20. The process of claim 30, wherein feeding comprises pulsing with a carrier gas.

21. The process of claim 30, wherein the tantalum source chemical is selected from the group consisting of tantalum halides and organic compounds of tantalum.

22. The process of claim 21, wherein the tantalum source chemical includes pentakis (dialkylamido) compounds of tantalum.

23. The process of claim 21, wherein the tantalum source chemical is selected from the group consisting of tantalum bromides, tantalum chlorides, tantalum fluorides and tantalum iodides.

24. The process of claim 30, wherein the nitrogen source chemical is selected from the group consisting of ammonia (NH₃) and its salts, hydrogen azide (HN₃) and the alkyl derivates thereof, hydrazine (N₂H₄) and salts of hydrazine, alkyl derivates of hydrazine, nitrogen fluoride NF₃, primary, secondary and tertiary amines, nitrogen radicals, and excited state nitrogen (N₂*), wherein * is a free electron capable of bonding.

25. The process of claim 30, wherein the nitrogen source chemical is selected from the group consisting of tertbutylamide, CH₃N₃, hydrazine hydrochloride dimethyl hydrazine, hydroxylamine hydrochloride, methylamine, diethylamine and triethylamine.

26. The process of claim 30, wherein the substrate comprises one or more materials selected from the group consisting of silicon, silica, coated silicon, copper metal and nitride.

27. The process of claim 30, wherein the tantalum nitride film defines a diffusion barrier in an integrated circuit.

28. The process of claim 30, wherein the reaction space is a reactor configured for plasma enhanced atomic layer deposition (PEALD).

29. The process of claim 30, wherein the reaction space is a single-wafer PEALD reactor.

31. The process of claim 30, further comprising repeating steps a) through f) until a tantalum nitride film of predetermined thickness is formed over the substrate.

32. The process of claim 30, wherein steps a) through d) are repeated a predetermined number of times before steps e) through f).

33. A method for depositing a conductive tantalum nitride film using a plasma-enhanced atomic layer deposition (PEALD) process, comprising:

providing a substrate in a reaction space; and

alternately and sequentially contacting a substrate in the reaction space with spatially and temporally separated vapor phase pulses of;

a tantalum source chemical;

plasma-excited species of hydrogen; and

a nitrogen source chemical,

wherein plasma parameters are selected such that a conductive tantalum nitride film is deposited essentially only over the substrate and a dielectric tantalum nitride film is deposited elsewhere in the reaction space.

34. The method of claim 33, wherein the plasma parameters are selected from the group consisting of RF power on time, RF power amplitude, RF power frequency, reactant concentration, reactant flow rate, reaction space pressure, total gas flow rate, reactant pulse durations and separations, and RF electrode spacing.

35. The method of claim 33, wherein the tantalum source chemical is selected from the group consisting of tantalum bromides, tantalum chlorides, tantalum fluorides and tantalum iodides.

36. The method of claim 33, wherein the nitrogen source chemical is selected from the group consisting of ammonia (NH₃) and its salts, hydrogen azide (HN₃) and the alkyl derivates thereof, hydrazine (N₂H₄) and salts of hydrazine, alkyl derivates of hydrazine, nitrogen fluoride NF₃, primary, secondary and tertiary amines, nitrogen radicals, and excited state nitrogen (N₂*), wherein * is a free electron capable of bonding.