METHOD AND APPARATUS FOR MEASURING OBJECT THICKNESS

• US 20080186022A1
• Filed: 04/08/2008
• Published: 08/07/2008
• Est. Priority Date: 12/13/2002
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Smith, Paul, Chang, Yu, Lei, Lawrence C., Gu, Yu Ping, Huston, Joel, Lu, Siqing, Pham, Quyen, Martner, Cecilia, Miller, Gabriel Lorimer
• Granted Patent: US 7,777,483 B2
• Time in Patent Office: Days
• US Class Current: 324/230
• CPC Class Codes: G01B 7/105 for measuring thickness of coating

Abstract

A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

Claims

1. An apparatus for dynamically measuring a thickness of a layer of a wafer, comprising:

an eddy current sensor having first and second sensor heads, said sensor heads positioned substantially opposite each other and defining a predetermined gap therebetween for passage by at least a portion of said wafer, said eddy current sensor configured to cause said first and second sensor heads to make measurements at one or more sampling locations on said wafer while said wafer is moving through said gap;

a robotic end effector configured to hold said wafer and move said wafer linearly through said gap while said measurements are made so that said measurements are made at said plurality of sampling locations along a line across said wafer; and

a controller connected to said eddy current sensor, said controller configured to determine said thickness of said layer of said wafer at said plurality of sampling locations from said measurements by said first and second sensor heads.

2. The apparatus of claim 1, further comprising a displacement sensor for detecting displacement of the wafer in a direction generally extending between the first and second sensor heads.

3. The apparatus of claim 2, wherein said displacement sensor is connected to said controller, and wherein said controller adjusts said measurements of said sensor heads to compensate for detected displacement of said wafer.

4. The apparatus of claim 2, wherein said displacement sensor comprises a laser distance sensor.

5. The apparatus of claim 1, wherein each sensor head includes a core and at least one coil mounted therein.

6. The apparatus of claim 1, further comprising an array of edge-detection sensors to successively detect an edge of the wafer as the wafer is moved through said gap.

7. The apparatus of claim 6, wherein said controller determines a velocity of said wafer from outputs of said edge-detection sensors.

8. The apparatus of claim 6, wherein said controller determines a position of said sampling locations on said wafer from outputs of said edge-detection sensors.

9. The apparatus of claim 6, wherein each edge-detection sensor comprises an optical sensor.

10. A method of measuring thickness of a conductive layer of a wafer, comprising the steps of:

moving the wafer linearly through a gap between first and second sensor heads of an eddy current sensor, the first and second sensor heads positioned substantially opposite each other to define the gap;

making on-the-fly measurements of said conductive layer at one or more sampling locations along a line across said wafer using said first and second sensor heads while moving said wafer; and

calculating the thickness of the conductive layer at said sampling locations from said measurements.

11. The method of claim 10, further comprising detecting displacement of said wafer in a direction generally extending between said first and second sensor heads.

12. The method of claim 11, further comprising adjusting said measurements to compensate for said displacement of said wafer.

13. The method of claim 10, further comprising displaying data specifying said thickness of said layer of said wafer at said sampling locations.

14. The method of claim 10, further comprising successively detecting an edge of the wafer as the wafer is moved past said sensor heads with an array of edge-detectors.

15. The method of claim 14, wherein detecting said edge of said wafer includes optically detecting said edge.

16. The method of claim 14, further comprising determining a velocity of said wafer from outputs from the array of edge-detection sensors.