Microwave Plasma Processing Apparatus

• US 20080190560A1
• Filed: 02/21/2006
• Published: 08/14/2008
• Est. Priority Date: 03/04/2005
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Tian, Caizhong, Yamamoto, Nobuhiko, Nozawa, Toshihisa, Ishibashi, Kiyotaka
• Application Number:
  US11/885,625
• Publication Number:
  US 20080190560A1
• Time in Patent Office: Days
• US Class Current: 156/345.42
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3222 Antennas
• CPC Class Codes: H01J 37/32238 Windows
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

The present invention is a microwave plasma processing apparatus comprising: a chamber in which an object to be processed is housed; a process gas supply unit that supplies a process gas into the chamber; a microwave generating source that generates a microwave for forming a plasma due to the process gas in the chamber; a waveguide unit that guides the microwave generated by the microwave generating source toward the chamber; a planar antenna made of a conductive material provided with a plurality of microwave radiating holes for radiating the microwave guided by the waveguide unit toward the chamber; a microwave transmitting plate made of a dielectric material, the microwave transmitting plate serving as a top wall of the chamber and transmitting the microwave that has passed through the microwave radiating holes of the planar antenna; and a slow-wave plate disposed on an opposite side of the planar antenna relative to the microwave transmitting plate, the slow-wave plate having a function of shortening a wavelength of the microwave that reaches the planar antenna. The planar antenna and the microwave transmitting plate are in contact with each other, with substantially no air therebetween, the slow-wave plate and the microwave transmitting plate are made of the same material, and an equivalent circuit formed by the slow-wave plate, the planar antenna, the microwave transmitting plate, and the plasma due to the process gas formed in the chamber satisfies a resonance condition.

Claims

1. A microwave plasma processing apparatus comprising:

a chamber in which an object to be processed is housed;

a process gas supply unit that supplies a process gas into the chamber;

a microwave generating source that generates a microwave for forming a plasma due to the process gas in the chamber;

a waveguide unit that guides the microwave generated by the microwave generating source toward the chamber;

a planar antenna made of a conductive material provided with a plurality of microwave radiating holes for radiating the microwave guided by the waveguide unit toward the chamber;

a microwave transmitting plate made of a dielectric material, the microwave transmitting plate serving as a top wall of the chamber and transmitting the microwave that has passed through the microwave radiating holes of the planar antenna; and

a slow-wave plate disposed on an opposite side of the planar antenna relative to the microwave transmitting plate, the slow-wave plate having a function of shortening a wavelength of the microwave that reaches the planar antenna;

wherein the planar antenna and the microwave transmitting plate are in contact with each other, with substantially no air therebetween,

the slow-wave plate and the microwave transmitting plate are made of the same material, and

an equivalent circuit formed by the slow-wave plate, the planar antenna, the microwave transmitting plate, and the plasma due to the process gas formed in the chamber satisfies a resonance condition.

3. The microwave plasma processing apparatus according to claim 1 or 2, wherein

a thickness of the microwave transmitting plate is within a range between ½

and ¼

of the wavelength of the microwave to be introduced into the microwave transmitting plate, and

a microwave reflection ratio of the planar antenna is within a range between 0.4 and 0.8.

4. The microwave plasma processing apparatus according to claim 1 or 2, wherein

the waveguide unit includes a rectangular waveguide that propagates the microwave generated from the microwave generating source in a TE mode, a mode converter that converts the TE mode to a TEM mode, and a coaxial waveguide that propagates the microwave converted to the TEM mode toward the planar antenna.

5. The microwave plasma processing apparatus according to claim 1 or 2, wherein

each of the microwave radiating holes formed in the planar antenna has an elongated groove shape,

every adjacent two of the microwave radiating holes are arranged in directions crossing each other so as to form one microwave radiating hole pair, and

the plurality of microwave radiating hole pairs are concentrically arranged.

6. The microwave plasma processing apparatus according to claim 1 or 2, further comprising

a cover member that covers the slow-wave plate and the planar antenna.

7. The microwave plasma processing apparatus according to claim 6, wherein

the cover member is provided with a cooling medium passage, and

the slow-wave plate, the planar antenna, and the microwave transmitting plate are cooled by allowing a cooling medium to flow through the cooling medium passage.

8. The microwave plasma processing apparatus according to claim 1 or 2, wherein

a frequency of the microwave is 2.45 GHz,

a relative dielectric constant of the slow-wave plate and the microwave transmitting plate is between 3.5 and 4.5, and

the microwave radiating holes are arranged in double circles.

9. The microwave plasma processing apparatus according to claim 1 or 2, wherein

the slow-wave plate and the microwave transmitting plates are made of quartz, and

the microwave plasma processing apparatus is a plasma etching apparatus or a plasma surface modifying apparatus.

10. The microwave plasma processing apparatus according to claim 1 or 2, wherein

the slow-wave plate and the microwave transmitting plate are made of alumina, and

the microwave plasma processing apparatus is a plasma CVD apparatus.

2. A microwave plasma processing apparatus comprising:

a chamber in which an object to be processed is housed;

a process gas supply unit that supplies a process gas into the chamber;

a microwave generating source that generates a microwave for forming a plasma due to the process gas in the chamber;

a waveguide unit that guides the microwave generated by the microwave generating source toward the chamber;

a planar antenna made of a conductive material provided with a plurality of microwave radiating holes for radiating the microwave guided by the waveguide unit toward the chamber;

a microwave transmitting plate made of a dielectric material, the microwave transmitting plate serving as a top wall of the chamber and transmitting the microwave that has passed through the microwave radiating holes of the planar antenna; and

a slow-wave plate disposed on an opposite side of the planar antenna relative to the microwave transmitting plate, the slow-wave plate having a function of shortening a wavelength of the microwave that reaches the planar antenna;

wherein the planar antenna and the microwave transmitting plate are in contact with each other, with substantially no air therebetween,

the slow-wave plate and the microwave transmitting plate are made of materials with a ratio between dielectric constants of these materials being within a range between 70% and 130%, and

an equivalent circuit formed by the slow-wave plate, the planar antenna, the microwave transmitting plate, and the plasma due to the process gas formed in the chamber satisfies a resonance condition.