System For Delivery Of Reagents From Solid Sources Thereof
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Accused Products
Abstract
A system (10) for delivery of reagent from a solid source thereof, comprising a structure (16, 22, 24) arranged to retain a solid source material (30) in confinement by at least a portion of the structure, for heating and generation of vapor from the solid source material by volatilization thereof, a heat source (82) arranged to heat the solid source material for such volatilization, and a vapor dispensing assembly (52, 54) arranged to discharge the vapor from the system. A high conductance valve (1510) is also described, suitable for use as a dispensing control valve for a reagent storage and dispensing vessel, e.g., a vessel containing a semiconductor manufacturing reagent that is dispensed at low pressure. The high conductance valve includes a valve body (1512) in which inlet and outlet passages are substantially perpendicular to one another, with their interior extremities communicating with a valve chamber (1536) containing a selectively positionable valve element movable between a fully open and fully closed position. Valve flow coefficient (CV) values on the order of 2.7 to 2.9 are achievable by such high conductance valve, enabling the valve to achieve superior dispensing operation even in extremely low pressure regimes, e.g., below 20 torr.
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Citations
365 Claims
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1-341. -341. (canceled)
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342. A system for processing a semiconductor device, comprising:
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a materials delivery system including a reagent supply vessel containing a source material utilized in processing the semiconductor device, and an added surface area structure in an interior volume of the reagent supply vessel for supporting the source material substantially disposed within interior regions of the added surface area structure; wherein the reagent supply vessel is adapted to deliver a process effective amount of the source material to a processing apparatus in selective fluid communication with the reagent supply vessel and operable to perform one of ion implantation, chemical vapor deposition, etching, cleaning and a combination thereof. - View Dependent Claims (343, 344, 345, 346)
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347. An ion implant system, comprising:
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(a) an ion implanter, including a gas box adapted to hold reagent supply vessels, wherein said ion implanter in operation becomes contaminated and requires cleaning to maintain its performance; and (b) a source of XeF2 chemistry comprising a solid source reagent supply vessel in said gas box, said reagent supply vessel including an internal volume containing solid XeF2 and being adapted to deliver XeF2 vapor from said solid XeF2 in said reagent supply vessel to the ion implanter for cleaning thereof, said reagent supply vessel containing an added surface area structure in the interior volume for supporting said solid XeF2. - View Dependent Claims (348, 349, 350, 351, 352)
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- 353. A fluorine chemistry source for cleaning of an ion implanter, said source comprising a solid source reagent supply vessel including an internal volume, and a metal foam body for holding solid fluorine source material, said metal foam body contacting interior wall surface of said internal volume, whereby the metal foam transmits heat to said solid fluorine source material for sublimation thereof.
- 362. A method of cleaning an ion implanter, said method comprising generating XeF2 vapor from solid XeF2 contained in porosity of a metal foam, and contacting said XeF2 vapor with said ion implanter for cleaning thereof.
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365. A method of cleaning a chamber having solid deposited material thereon that is removably reactive with xenon difluoride vapor, to remove such material, said method comprising contacting said solid deposited material with xenon difluoride vapor for sufficient time to effect removal of at least part of said solid deposited material from said chamber.
Specification