IN SITU MODIFICATION OF GROUP IV NANOPARTICLES USING GAS PHASE NANOPARTICLE REACTORS

• US 20080191193A1
• Filed: 12/31/2007
• Published: 08/14/2008
• Est. Priority Date: 01/22/2007
• Status: Abandoned Application

• Current Assignee: Damian Aherne, David Jurbergs, Elena Rogojina, Xuegeng Li
• Original Assignee: Damian Aherne, David Jurbergs, Elena Rogojina, Xuegeng Li
• Inventors: Rogojina, Elena, Jurbergs, David, Li, Xuegeng, Aherne, Damian
• Application Number:
  US11/967,568
• Publication Number:
  US 20080191193A1
• Time in Patent Office: Days
• US Class Current: 257/14
• CPC Class Codes: B01J 19/121 Coherent waves, e.g. laser beams lasers per se H01S3/00
• CPC Class Codes: B01J 2219/0883 Gas-gas
• CPC Class Codes: B22F 1/054 Nanosized particles
• CPC Class Codes: B22F 1/102 Metallic powder coated with organic material
• CPC Class Codes: B22F 2202/11 Use of irradiation
• CPC Class Codes: B22F 2999/00 Aspects linked to processes or compositions used in powder metallurgy
• CPC Class Codes: B22F 9/28 starting from gaseous metal compounds
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C01B 33/027 by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
• CPC Class Codes: C01P 2002/82 by IR- or Raman-data
• CPC Class Codes: C01P 2004/10 extending in one dimension, e.g. needle-like
• CPC Class Codes: C01P 2004/16 Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
• CPC Class Codes: C01P 2004/32 Spheres
• CPC Class Codes: C01P 2004/64 Nanometer sized, i.e. from 1-100 nanometer

Abstract

A method for creating an organically capped Group IV semiconductor nanoparticle is disclosed. The method includes flowing a Group IV semiconductor precursor gas into a chamber. The method also includes generating a set of Group IV semiconductor precursor radical species from the Group IV semiconductor precursor gas with a laser pyrolysis apparatus, wherein the set of the Group IV semiconductor precursor radical species nucleate to form the Group IV semiconductor nanoparticle; and flowing an organic capping agent precursor gas into the chamber. The method further includes generating a set of organic capping agent radical species from the organic capping agent precursor gas, wherein the set of organic capping agent radical species reacts with a surface of the Group IV semiconductor nanoparticle and forms the organically capped Group IV semiconductor nanoparticle.

Claims

1. A method for creating an organically capped Group IV semiconductor nanoparticle, comprising:

flowing a Group IV semiconductor precursor gas into a chamber;

generating a set of Group IV semiconductor precursor radical species from the Group IV semiconductor precursor gas with a laser pyrolysis apparatus, wherein the set of the Group IV semiconductor precursor radical species nucleate to form the Group IV semiconductor nanoparticle;

flowing an organic capping agent precursor gas into the chamber;

generating a set of organic capping agent radical species from the organic capping agent precursor gas, wherein the set of organic capping agent radical species reacts with a surface of the Group IV semiconductor nanoparticle and forms the organically capped Group IV semiconductor nanoparticle.

2. The method of claim 1, wherein the Group IV semiconductor precursor gas is one of silane, disilane, germane, and digermane.

3. The method of claim 1, wherein the organic capping agent precursor gas includes at least one of an alkene, an alkyne, an amine, a phenyl, and a benzyl.

4. The method of claim 1, wherein the organically capped Group IV semiconductor nanoparticle has a diameter of between about 1 nm and about 100 nm.

5. The method of claim 1, wherein the organically capped Group IV semiconductor nanoparticle is one of a single-crystalline nanoparticle, a polycrystalline nanoparticle, and an amorphous nanoparticle.

6. A method for creating an organically capped Group IV semiconductor nanoparticle, comprising:

flowing a Group IV semiconductor precursor gas into a chamber;

flowing a dopant precursor gas into the chamber;

generating a set of Group IV semiconductor precursor radical species from the Group IV semiconductor precursor gas and the dopant precursor gas with a laser pyrolysis apparatus, wherein the set of the Group IV semiconductor precursor radical species nucleate to form a Group IV semiconductor nanoparticle;

flowing an organic capping agent precursor gas into the chamber;

generating a set of organic capping agent radical species from the organic capping agent precursor gas, wherein the set of organic capping agent radical species reacts with a surface of the Group IV semiconductor nanoparticle and forms the organically capped Group IV semiconductor nanoparticle.

7. The method of claim 6, wherein the Group IV semiconductor precursor gas is one of silane, disilane, germane, and digermane.

8. The method of claim 6, wherein the dopant precursor gas is one of boron diflouride, trimethyl borane, and diborane.

9. The method of claim 6, wherein the organic capping agent precursor gas includes at least one of an alkene, an alkyne, an amine, a phenyl, and a benzyl.

10. The method of claim 6, wherein the organically capped Group IV semiconductor nanoparticle has a diameter of between about 1 nm and about 100 nm.

11. The method of claim 6, wherein the organically capped Group IV semiconductor nanoparticle is one of a single-crystalline nanoparticle, a polycrystalline nanoparticle, and an amorphous nanoparticle.

12. An organically capped Group IV semiconductor nanoparticle, created by the method comprising:

flowing a Group IV semiconductor precursor gas into a chamber;

generating a set of Group IV semiconductor precursor radical species from the Group IV semiconductor precursor gas with a laser pyrolysis apparatus, wherein the set of the Group IV semiconductor precursor radical species nucleate to form a Group IV semiconductor nanoparticle;

flowing an organic capping agent precursor gas into the chamber;

generating a set of organic capping agent radical species from the organic capping agent precursor gas, wherein the set of organic capping agent radical species reacts with a surface of the Group IV semiconductor nanoparticle and forms the organically capped Group IV semiconductor nanoparticle.

13. The organically capped Group IV semiconductor nanoparticle of claim 12, wherein the Group IV semiconductor precursor gas is one of silane, disilane, germane, and digermane.

14. The organically capped Group IV semiconductor nanoparticle of claim 12, wherein the organic capping agent precursor gas includes at least one of an alkene, an alkyne, an amine, a phenyl, and a benzyl.

15. The organically capped Group IV semiconductor nanoparticle of claim 12, wherein the organically capped Group IV semiconductor nanoparticle has a diameter of between about 1 nm and about 100 nm.

16. The organically capped Group IV semiconductor nanoparticle of claim 12, wherein the organically capped Group IV semiconductor nanoparticle is one of a single-crystalline nanoparticle, a polycrystalline nanoparticle, and an amorphous nanoparticle.

17. An organically capped Group IV semiconductor nanoparticle, created by the method comprising:

flowing a Group IV semiconductor precursor gas into a chamber;

flowing a dopant precursor gas into the chamber;

generating a set of Group IV semiconductor precursor radical species from the Group IV semiconductor precursor gas and the dopant precursor gas with a laser pyrolysis apparatus, wherein the set of the Group IV semiconductor precursor radical species nucleate to form a Group IV semiconductor nanoparticle;

flowing an organic capping agent precursor gas into the chamber;

generating a set of organic capping agent radical species from the organic capping agent precursor gas, wherein the set of organic capping agent radical species reacts with a surface of the Group IV semiconductor nanoparticle and forms the organically capped Group IV semiconductor nanoparticle.

18. The organically capped Group IV semiconductor nanoparticle of claim 17, wherein the Group IV semiconductor precursor gas is one of silane, disilane, germane, and digermane.

19. The organically capped Group IV semiconductor nanoparticle of claim 17, wherein the dopant precursor gas is one of boron diflouride, trimethyl borane, and diborane.

20. The organically capped Group IV semiconductor nanoparticle of claim 17, wherein the organic capping agent precursor gas includes at least one of an alkene, an alkyne, an amine, a phenyl, and a benzyl.

21. The organically capped Group IV semiconductor nanoparticle of claim 17, wherein the organically capped Group IV semiconductor nanoparticle has a diameter of between about 1 nm and about 100 nm.

22. The organically capped Group IV semiconductor nanoparticle of claim 17, wherein the organically capped Group IV semiconductor nanoparticle is one of a single-crystalline nanoparticle, a polycrystalline nanoparticle, and an amorphous nanoparticle.