Non-volatile memory devices and methods of operating and fabricating the same
First Claim
1. A non-volatile memory device, comprising:
- one or more oxide based compound semiconductor layers;
a plurality of auxiliary gate electrodes insulated from the one or more oxide based compound semiconductor layers;
a plurality of control gate electrodes respectively positioned between adjacent pairs of the plurality of auxiliary gate electrodes at a different level from the plurality of auxiliary gate electrodes, the plurality of control gate electrodes being insulated from the one or more oxide based compound semiconductor layers; and
a plurality of charge storing layers respectively between the one or more oxide based compound semiconductor layers and the plurality of control gate electrodes.
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Abstract
Non-volatile memory devices highly integrated using an oxide based compound semiconductor and methods of operating and fabricating the same are provided. A non-volatile memory device may include one or more oxide based compound semiconductor layers. A plurality of auxiliary gate electrodes may be arranged to be insulated from the one or more oxide based compound semiconductor layers. A plurality of control gate electrodes may be positioned between adjacent pairs of the plurality of auxiliary gate electrodes at a different level from the plurality of auxiliary gate electrodes. The plurality of control gate electrodes may be insulated from the one or more oxide based compound semiconductor layers. A plurality of charge storing layers may be interposed between the one or more oxide based compound semiconductor layers and the plurality of control gate electrodes.
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Citations
28 Claims
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1. A non-volatile memory device, comprising:
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one or more oxide based compound semiconductor layers; a plurality of auxiliary gate electrodes insulated from the one or more oxide based compound semiconductor layers; a plurality of control gate electrodes respectively positioned between adjacent pairs of the plurality of auxiliary gate electrodes at a different level from the plurality of auxiliary gate electrodes, the plurality of control gate electrodes being insulated from the one or more oxide based compound semiconductor layers; and a plurality of charge storing layers respectively between the one or more oxide based compound semiconductor layers and the plurality of control gate electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of fabricating a non-volatile memory device, comprising:
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providing one or more oxide based compound semiconductor layers; forming a plurality of auxiliary gate electrodes to be insulated from the one or more oxide based compound semiconductor layers; forming a plurality of control gate electrodes to be respectively positioned between adjacent pairs of the plurality of auxiliary gate electrodes at a different level from the plurality of auxiliary gate electrodes, the plurality of control gate electrodes being insulated from the one or more oxide based compound semiconductor layers; and forming a plurality of charge storing layers respectively between the one or more oxide based compound semiconductor layers and the plurality of control gate electrodes. - View Dependent Claims (22, 23, 24, 25, 26, 27)
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28-34. -34. (canceled)
Specification